BCW60ALT1 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: BCW60ALT1
   Código: AA
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 0.3 W
   Tensión colector-base (Vcb): 32 V
   Tensión colector-emisor (Vce): 32 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 125 MHz
   Capacitancia de salida (Cc): 4.5 pF
   Ganancia de corriente contínua (hfe): 120
   Paquete / Cubierta: TO236

Búsqueda de reemplazo de transistor bipolar BCW60ALT1

BCW60ALT1 Datasheet (PDF)

6.1. Size:425K motorola
bcw60alt.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BCW60ALT1/DBCW60ALT1General Purpose TransistorsBCW60BLT1NPN SiliconCOLLECTORBCW60DLT131BASE32EMITTER12MAXIMUM RATINGSRating Symbol Value UnitCASE 31808, STYLE 6SOT23 (TO236AB)CollectorEmitter Voltage VCEO 32 VdcCollectorBase Voltage VCBO 32 VdcEmitterBase Voltage VEBO 5.0

8.1. Size:76K fairchild semi
bcw60a b c d.pdf

BCW60A/B/C/DGeneral Purpose Transistor32SOT-2311. Base 2. Emitter 3. Collector NPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 32 V VCEO Collector-Emitter Voltage 32 V VEBO Emitter-Base Voltage 5 V IC Collector Current 100 mA PC Collector Power Dissipation 350 mW TSTG

8.2. Size:82K cdil
bcw60a b c d.pdf

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySOT-23 Formed SMD Package BCW60A BCW60BBCW60C BCW60DSILICON PLANAR EPITAXIAL TRANSISTORSNPN silicon transistorsMarkingBCW60A = AABCW60B = ABPACKAGE OUTLINE DETAILSBCW60C = ACALL DIMENSIONS IN mmBCW60D = ADPin configuration1 = BASE2 = EMITTER3 = COLLECTOR312ABSOL

8.3. Size:10717K sprague
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