BCW60RA Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BCW60RA

Código: ZA

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.15 W

Tensión colector-base (Vcb): 32 V

Tensión colector-emisor (Vce): 32 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 250 MHz

Capacitancia de salida (Cc): 4.5 pF

Ganancia de corriente contínua (hFE): 120

Encapsulados: SOT23

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BCW60RA datasheet

 9.1. Size:425K  motorola
bcw60alt.pdf pdf_icon

BCW60RA

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BCW60ALT1/D BCW60ALT1 General Purpose Transistors BCW60BLT1 NPN Silicon COLLECTOR BCW60DLT1 3 1 BASE 3 2 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol Value Unit CASE 318 08, STYLE 6 SOT 23 (TO 236AB) Collector Emitter Voltage VCEO 32 Vdc Collector Base Voltage VCBO 32 Vdc Emitter Base Voltage VEBO 5.0

 9.2. Size:120K  philips
bcw60.pdf pdf_icon

BCW60RA

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 BCW60 series NPN general purpose transistors Product data sheet 1999 Apr 22 Supersedes data of 1997 Mar 10 NXP Semiconductors Product data sheet NPN general purpose transistors BCW60 series FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 32 V). 1 base 2 emitter APPLICATIONS 3 coll

 9.3. Size:48K  philips
bcw60 3.pdf pdf_icon

BCW60RA

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BCW60 series NPN general purpose transistors 1999 Apr 22 Product specification Supersedes data of 1997 Mar 10 Philips Semiconductors Product specification NPN general purpose transistors BCW60 series FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 32 V). 1 base 2 emitter APPLICATIONS

 9.4. Size:76K  fairchild semi
bcw60a b c d.pdf pdf_icon

BCW60RA

BCW60A/B/C/D General Purpose Transistor 3 2 SOT-23 1 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 32 V VCEO Collector-Emitter Voltage 32 V VEBO Emitter-Base Voltage 5 V IC Collector Current 100 mA PC Collector Power Dissipation 350 mW TSTG

Otros transistores... BCW60B, BCW60BLT1, BCW60C, BCW60CLT1, BCW60D, BCW60DLT1, BCW60FF, BCW60FN, BD140, BCW60RB, BCW60RC, BCW60RD, BCW61, BCW61ALT1, BCW61BLT1, BCW61CLT1, BCW61D