BCW61FN . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BCW61BLT1/DBCW61BLT1General Purpose TransistorsBCW61CLT1PNP SiliconCOLLECTORBCW61DLT131BASE32EMITTER1MAXIMUM RATINGS2Rating Symbol Value UnitCollectorEmitter Voltage VCEO 32 VdcCASE 31808, STYLE 6SOT23 (TO236AB)CollectorBase Voltage VCBO 32 VdcEmitterBase Voltage VEB

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088BCW61 seriesPNP general purpose transistorsProduct specification 1999 Apr 12Supersedes data of 1997 May 28Philips Semiconductors Product specificationPNP general purpose transistors BCW61 seriesFEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 32 V).1 base2 emitterAPPLICATIONS

DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D088BCW61 seriesPNP general purpose transistorsProduct data sheet 1999 Apr 12Supersedes data of 1997 May 28 NXP Semiconductors Product data sheetPNP general purpose transistors BCW61 seriesFEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 32 V).1 base2 emitterAPPLICATIONS3 coll

BCW61A/B/C/DGeneral Purpose Transistor32SOT-2311. Base 2. Emitter 3. CollectorPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage -32 V VCEO Collector-Emitter Voltage -32 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current -100 mA PC Collector Power Dissipation 350 mW

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

BCW61A/B/C/D PNP EPITAXIAL SILICON TRANSISTORGENERAL PURPOSE TRANSISTORSOT-23ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating Unit Cllector-Base Voltage VCBO -32 V Collector-Emitter Voltage VCEO -32 V Emitter-Base Voltage VEBO -5.0 V Collector Current IC -100 mA Collector Dissipation PC 350 mW Storage Temperature TSTG -55 ~ 150 Refer to KS5086 for grap

PNP Silicon AF Transistors BCW 61BCX 71 For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BCW 60, BCX 70 (NPN)Type Marking Ordering Code Pin Configuration Package1)(tape and reel) 1 2 3BCW 61 A BAs Q62702-C452 B E C SOT-23BCW 61 B BBs Q62702-C1585BCW 61 C BCs Q62702

BCW61..., BCX71...PNP Silicon AF Transistors For AF input stages and driver applications23 High current gain1 Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BCW60, BCX70 (NPN) Pb-free (RoHS compliant) package1) Qualified according AEC Q101Type Marking Pin Configuration PackageBCW61A BAs 1=B 2=E 3=C

BCW61..., BCX71...PNP Silicon AF Transistors For AF input stages and driver applications23 High current gain1 Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BCW60, BCX70 (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q101Type Marking Pin Configuration PackageBCW61A BAs 1=B 2=E 3=C SO

BCW61C -0.1A , -32V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES Low current AL Low voltage 33Top View C BMARKING : 11 2BC 2K EDPACKAGE INFORMATION Collector H JF G3 Package MPQ Leader Size Millimeter Millimeter REF. REF. Min. Ma

BCW61B -0.1A , -32V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES Low current AL Low voltage 33Top ViewC BMARKING : 11 2BB 2K EDPACKAGE INFORMATION Collector H JF G3 Package MPQ Leader Size Millimeter Millimeter REF. REF. Min. M

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySOT-23 Formed SMD Package BCW61A BCW61BBCW61C BCW61DSILICON PLANAR EPITAXIAL TRANSISTORSPNP silicon transistorsMarkingBCW61A = BABCW61B = BBBCW61C = BC PACKAGE OUTLINE DETAILSBCW61D = BD ALL DIMENSIONS IN mmPin configuration1 = BASE2 = EMITTER3 = COLLECTOR312ABSOLUT

BCW61B SOT-23 Transistor(PNP)SOT-231. BASE 2. EMITTER 3. COLLECTOR Features Low current Low voltage AXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsDimensions in inches and (millimeters)VCBO -32 VCollector-Emitter Voltage VCEO -32 VCollector-Emitter Voltage VEBO -5 VEmitter-Base Voltage IC Collector Current -Continuous -0.

BCW61C SOT-23 Transistor(PNP)SOT-231. BASE 2. EMITTER 3. COLLECTOR Features Low current Low voltage AXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)Symbol Parameter Value UnitsVCBO -32 VCollector-Emitter Voltage VCEO -32 VCollector-Emitter Voltage VEBO -5 VEmitter-Base Voltage IC Collector Current -Continuous -0.1

SMD Type TransistorsPNP TransistorsBCW61 (KCW61)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.1 Features3 Low current Low voltage General Purpose Transistor1 2+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -32 Collector - Emi