BCW65CLT1 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

BCW65ALT1G,BCW65CLT1GGeneral Purpose TransistorNPN Siliconhttp://onsemi.comFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTOR3Compliant1BASEMAXIMUM RATINGS2Rating Symbol Value UnitEMITTERCollector - Emitter Voltage VCEO 32 VdcCollector - Base Voltage VCBO 60 Vdc3Emitter - Base Voltage VEBO 5.0 Vdc1Collector Current - Cont

BCW65ALT1G,BCW65CLT1GGeneral Purpose TransistorNPN Siliconwww.onsemi.comFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTOR3Compliant1BASEMAXIMUM RATINGS2Rating Symbol Value UnitEMITTERCollector - Emitter Voltage VCEO 32 VdcCollector - Base Voltage VCBO 60 Vdc 3Emitter - Base Voltage VEBO 5.0 Vdc1Collector Current - Continuo

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BCW65ALT1/DGeneral Purpose TransistorBCW65ALT1NPN SiliconCOLLECTOR313BASE122EMITTERMAXIMUM RATINGSCASE 31808, STYLE 6Rating Symbol Value Unit SOT23 (TO236AB)CollectorEmitter Voltage VCEO 32 VdcCollectorBase Voltage VCBO 60 VdcEmitterBase Voltage VEBO 5.0 VdcCollector Current

NPN Silicon AF Transistors BCW 65BCW 66 For general AF applications High current gain Low collector-emitter saturation voltage Complementary types: BCW 67, BCW 68 (PNP)Type Marking Ordering Code Pin Configuration Package1)(tape and reel) 1 2 3BCW 65 A EAs Q62702-C1516 B E C SOT-23BCW 65 B EBs Q62702-C1612BCW 65 C ECs Q62702-C1479BCW 66 F EFs Q62702-C1892BCW 66 G EGs Q627

SOT23 NPN SILICON PLANARBCW65MEDIUM POWER TRANSISTORSBCW66ISSUE 3 - AUGUST 1995. T I D T I V V EC V T BV T T SOT23 8ABSOLUTE MAXIMUM RATINGS. T IT II V I V V II i V I V V i V I V V V i II I 8 V II I V V I V Di i i T V i T T T V V V V V V V V BCW65BCW66ELECTRICAL CHARACTERISTICS (at Tamb = 25

BCW65ALT1G,BCW65CLT1GGeneral Purpose TransistorNPN Siliconhttp://onsemi.comFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTOR3Compliant1BASEMAXIMUM RATINGS2Rating Symbol Value UnitEMITTERCollector - Emitter Voltage VCEO 32 VdcCollector - Base Voltage VCBO 60 Vdc3Emitter - Base Voltage VEBO 5.0 Vdc1Collector Current - Cont

BCW65ALT1G,BCW65CLT1GGeneral Purpose TransistorNPN Siliconhttp://onsemi.comFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTOR3Compliant1BASEMAXIMUM RATINGS2Rating Symbol Value UnitEMITTERCollector - Emitter Voltage VCEO 32 VdcCollector - Base Voltage VCBO 60 Vdc3Emitter - Base Voltage VEBO 5.0 Vdc1Collector Current - Cont

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySOT-23 Formed SMD PackageBCW65A, BCW65BBCW65CGENERAL PURPOSE TRANSISTORNPN transistorMarkingPACKAGE OUTLINE DETAILSBCW65A = EAALL DIMENSIONS IN mmBCW65B = EBBCW65C = ECPin configuration1 = BASE2 = EMITTER3 = COLLECTOR312ABSOLUTE MAXIMUM RATINGS BCW65A 65B 65CC

FM120-M WILLASBC LT1THRUGeneral Purpose TransistorsFM1200-M1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProducPackage outlineFeaturesNPN Silicons design, excellent power dissipation offers Batch proces betFeatruester reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in ord

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconLBCW65ALT1GFeatruesS-LBCW65ALT1GWe declare that the material of product compliance with RoHS requirements.S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.3MAXIMUM RATINGS1Rating Symbol Value Unit2CollectorEmit

SMD Type TransistorsNPN TransistorsBCW65 (KCW65)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.1 Features 3 Collector Current Capability IC=800mA Collector Emitter Voltage VCEO=32V General Purpose Transistor 1 2+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Coll