BCW66H Todos los transistores

 ..1. Size:294K  nxp
 bcw66f bcw66g bcw66h.pdf

BCW66 series 45 V, 800 mA NPN general-purpose transistor Rev. 1 21 April 2017 Product data sheet 1 General description NPN general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complements BCW68F/G/H 2 Features and benefits High current AEC-Q101 qualified 3 Applications General-purpose switching and amplification 4

 ..2. Size:195K  diodes
 bcw66h.pdf

A Product Line of Diodes Incorporated BCW66H 45V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data BVCEO > 45V Case SOT23 IC = 800mA High Continuous Collector Current Case Material molded plastic, Green molding compound Low Saturation Voltage VCE(sat)

 ..3. Size:505K  mcc
 bcw66h.pdf

BCW66H Features Ideally Suited for Automatic Insertion Low Current, Low Voltage Epitaxial Planar Die Construction NPN Small Halogen Free. "Green" Device (Note 1) Moisture Sensitivity Level 1 Signal Transistor Epoxy Meets UL 94 V-0 Flammability Rating Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) Maximum R

 9.1. Size:39K  st
 bcw66.pdf

BCW66 SMALL SIGNAL NPN TRANSISTORS Type Marking BCW66F EF BCW66G EG BCW66H EH SILICON EPITAXIAL PLANAR NPN 2 TRANSISTORS MINIATURE PLASTIC PACKAGE FOR 3 APPLICATION IN SURFACE MOUNTING 1 CIRCUITS MEDIUM CURRENT AF AMPLIFICATION SOT-23 AND SWITCHING PNP COMPLEMENT IS BCW68 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V Collector-Emitter

 9.2. Size:46K  fairchild semi
 bcw66g.pdf

BCW66G NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at 3 collector currents to 500mA. Sourced from process 13. 2 SOT-23 1 Mark EG 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings * TC=25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 45 V VCBO Collector-Base Voltage 75 V

 9.3. Size:134K  siemens
 bcw65 bcw66.pdf

NPN Silicon AF Transistors BCW 65 BCW 66 For general AF applications High current gain Low collector-emitter saturation voltage Complementary types BCW 67, BCW 68 (PNP) Type Marking Ordering Code Pin Configuration Package1) (tape and reel) 1 2 3 BCW 65 A EAs Q62702-C1516 B E C SOT-23 BCW 65 B EBs Q62702-C1612 BCW 65 C ECs Q62702-C1479 BCW 66 F EFs Q62702-C1892 BCW 66 G EGs Q627

 9.4. Size:52K  diodes
 bcw65 bcw66.pdf

SOT23 NPN SILICON PLANAR BCW65 MEDIUM POWER TRANSISTORS BCW66 ISSUE 3 - AUGUST 1995 . T I D T I V V E C V T B V T T SOT23 8 ABSOLUTE MAXIMUM RATINGS. T IT II V I V V II i V I V V i V I V V V i II I 8 V II I V V I V Di i i T V i T T T V V V V V V V V BCW65 BCW66 ELECTRICAL CHARACTERISTICS (at Tamb = 25

 9.5. Size:74K  infineon
 bcw66.pdf

BCW66 NPN Silicon AF Transistors For general AF applications 2 3 High current gain 1 Low collector-emitter saturation voltage Complementary type BCW68 (PNP) Pb-free (RoHS compliant) package1) Qualified according AEC Q101 Type Marking Pin Configuration Package BCW66F EFs 1=B 2=E 3=C SOT23 BCW66KF* EFs 1=B 2=E 3=C SOT23 BCW66G EGs 1=B 2=E 3=C SOT23 BCW66

 9.6. Size:525K  infineon
 bcw66k.pdf

BCW66K NPN Silicon AF Transistors For general AF applications 2 3 High current gain 1 Low collector-emitter saturation voltage Complementary type BCW68 (PNP) Pb-free (RoHS compliant) package Qualified according AEC Q101 Type Marking Pin Configuration Package BCW66KF EFs 1=B 2=E 3=C SOT23 BCW66KG EGs 1=B 2=E 3=C SOT23 BCW66KH EHs 1=B 2=E 3=C SOT23 Maximu

 9.7. Size:877K  mcc
 bcw66f.pdf

BCW66F Features Ideally Suited for Automatic Insertion Low Current, Low Voltage Epitaxial Planar Die Construction NPN Small Halogen Free. "Green" Device (Note 1) Moisture Sensitivity Level 1 Signal Transistor Epoxy Meets UL 94 V-0 Flammability Rating Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) Maximu

 9.8. Size:103K  onsemi
 sbcw66glt1g.pdf

BCW66GLT1G, SBCW66GLT1G General Purpose Transistor NPN Silicon http //onsemi.com Features AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS SOT-23 Compliant* (TO-236) CASE 318-08 STYLE 6 MAXIMUM RATINGS COLLECTOR Ratin

 9.9. Size:88K  onsemi
 bcw66glt1g.pdf

BCW66GLT1G, SBCW66GLT1G General Purpose Transistor NPN Silicon http //onsemi.com Features AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS SOT-23 Compliant* (TO-236) CASE 318-08 STYLE 6 MAXIMUM RATINGS COLLECTOR Ratin

 9.10. Size:110K  onsemi
 bcw66glt1-d.pdf

BCW66GLT1G General Purpose Transistor NPN Silicon Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http //onsemi.com Compliant COLLECTOR 3 1 BASE MAXIMUM RATINGS 2 Rating Symbol Value Unit EMITTER Collector-Emitter Voltage VCEO 45 Vdc Collector-Base Voltage VCBO 75 Vdc 3 Emitter-Base Voltage VEBO 5.0 Vdc SOT-23 CASE 318 Collector Current - Continuo

 9.11. Size:143K  onsemi
 bcw66glt1g sbcw66glt1g.pdf

BCW66GLT1G, SBCW66GLT1G General Purpose Transistor NPN Silicon www.onsemi.com Features S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant SOT-23 (TO-236) CASE 318 STYLE 6 MAXIMUM RATINGS COLLECTOR Rating Symbol Va

 9.12. Size:80K  cdil
 bcw66f g h.pdf

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW66F, BCW66G BCW66H GENERAL PURPOSE TRANSISTOR N P N transistor Marking PACKAGE OUTLINE DETAILS BCW 66F = EF ALL DIMENSIONS IN mm BCW 66G = EG BCW 66H = EH Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS BCW66F 66G 66H

 9.13. Size:779K  jiangsu
 bcw66.pdf

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 BCW66 TRANSISTOR (NPN) FEATURES 1. BASE Complementary to BCW68 2. EMITTER 3. COLLECTOR BCW66 is subdivided into three groups F,G and H according to DC current gain MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 75 V CBO VCEO

 9.14. Size:285K  willas
 bcw66glt1.pdf

FM120-M WILLAS BCW66GLT1THRU General Purpose Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Produc Package outline Features NPN Silicon Batch process design, excellent power dissipation offers better reverse leakage current and the We declare that the material of product rmal resistance. SOD-123H Low profile

 9.15. Size:1272K  kexin
 bcw66.pdf

SMD Type Transistors NPN Transistors BCW66 (KCW66) SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 Features 3 BCW66 is subdivided into three groups F,G and H according to DC current gain Complementary to BCW68 1 2 +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collecto

 9.16. Size:10717K  sprague
 bcw31 bcw32 bcw33 bcw60a bcw60b bcw60c bcw60d bcw65a bcw65b bcw66f bcw66g bcw71 bcw72 bcx19 bcx20 bcx70g.pdf