BCW68RH . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BCW68GLT1/D General Purpose Transistor BCW68GLT1 PNP Silicon COLLECTOR 3 1 3 BASE 1 2 2 EMITTER MAXIMUM RATINGS CASE 318 08, STYLE 6 Rating Symbol Value Unit SOT 23 (TO 236AB) Collector Emitter Voltage VCEO 45 Vdc Collector Base Voltage VCBO 60 Vdc Emitter Base Voltage VEBO 5.0 Vdc Collector

BCW68G C E SOT-23 B Mark DG PNP General Purpose Amplifier This device is designed for general purpose amplifier and switching applications at currents to 500 mA. Sourced from Process 63. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 45 V VCBO Collector-Base Voltage 60 V 3 VEBO Emitter-Base Voltage 5.0 V IC

BCW68 series 45 V, 800 mA PNP general-purpose transistor Rev. 1 21 April 2017 Product data sheet 1 General description PNP general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complements BCW66F/G/H 2 Features and benefits High current AEC-Q101 qualified 3 Applications General-purpose switching and amplification 4

PNP Silicon AF Transistors BCW 67 BCW 68 For general AF applications High current gain Low collector-emitter saturation voltage Complementary types BCW 65, BCW 66 (NPN) Type Marking Ordering Code Pin Configuration Package1) (tape and reel) 1 2 3 BCW 67 A DAs Q62702-C1560 B E C SOT-23 BCW 67 B DBs Q62702-C1480 BCW 67 C DCs Q62702-C1681 BCW 68 F DFs Q62702-C1893 BCW 68 G DGs Q627

A Product Line of Diodes Incorporated BCW68H 45V PNP MEDIUM POWER TRANSISTOR IN SOT23 Features Mechanical Data BVCEO > -45V Case SOT23 IC = -800mA high Continuous Collector Current Case Material molded plastic, Green molding compound Low Saturation Voltage VCE(sat)

SOT23 PNP SILICON PLANAR BCW67 MEDIUM POWER TRANSISTORS BCW68 ISSUE 4 - JUNE 1996 T I D T I D . D E C D 8 D 8 T 8 D 8 T B 8 D 8 T T SOT23 8 ABSOLUTE MAXIMUM RATINGS. T 8 IT II i V I V V II i V I V V i V I V V I I i II I 8 I V V Di i i T V i T T T V V V V V V V V BCW67 BCW68 ELECTRICAL CHARACT

BCW67, BCW68 PNP Silicon AF Transistors For general AF applications 2 3 High current gain 1 Low collector-emitter saturation voltage Complementary types BCW66... (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q101 Type Marking Pin Configuration Package BCW67A DAs 1=B 2=E 3=C SOT23 BCW67B DBs 1=B 2=E 3=C SOT23 BCW67C DCs 1=B 2=E 3=C SOT23

BCW68G Features Ideally Suited for Automatic Insertion Low Current, Low Voltage Epitaxial Planar Die Construction Halogen Free. "Green" Device (Note 1) PNP Small Moisture Sensitivity Level 1 Signal Transistor Epoxy Meets UL 94 V-0 Flammability Rating Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) Maximum R

BCW68H Features Ideally Suited for Automatic Insertion Low Current, Low Voltage Epitaxial Planar Die Construction Halogen Free. Green Device (Note 1) PNP Small Moisture Sensitivity Level 1 Signal Transistor Epoxy Meets UL 94 V-0 Flammability Rating Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) Maxim

BCW68GL General Purpose Transistor PNP Silicon Features NSV Prefix for Automotive and Other Applications Requiring www.onsemi.com Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable COLLECTOR 3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE 2 MAXIMUM RATINGS EMITTER Rating Symbol Value Unit Collector-Emitter Vo

BCW68GLT1G General Purpose Transistor PNP Silicon Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http //onsemi.com Compliant COLLECTOR 3 1 MAXIMUM RATINGS BASE Rating Symbol Value Unit Collector-Emitter Voltage VCEO -45 Vdc 2 EMITTER Collector-Base Voltage VCBO -60 Vdc Emitter-Base Voltage VEBO -5.0 Vdc Collector Current - Continuous IC -800 mAdc 3

BCW68GL General Purpose Transistor PNP Silicon Features NSV Prefix for Automotive and Other Applications Requiring www.onsemi.com Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable COLLECTOR 3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE 2 MAXIMUM RATINGS EMITTER Rating Symbol Value Unit Collector-Emitter Vo

BCW68GL General Purpose Transistor PNP Silicon Features NSV Prefix for Automotive and Other Applications Requiring www.onsemi.com Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable COLLECTOR 3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE 2 MAXIMUM RATINGS EMITTER Rating Symbol Value Unit Collector-Emitter Vo

BCW68 PNP Plastic-Encapsulate Transistors Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 A FEATURES L 3 3 Complementary to BCW66. Top View C B COLLECTOR 1 1 2 3 2 K E D 1 H J MARKING F G BASE BCW68F DF Millimeter Millimeter BCW68G DG REF. REF. Min. Max. Min. Max. 2 BCW68H DH A 2.70 3.04 G - 0.18

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW67, A, B, C BCW68, F, G, H GENERAL PURPOSE TRANSISTOR P N P transistor Marking PACKAGE OUTLINE DETAILS BCW67A = DA ALL DIMENSIONS IN mm BCW67B = DB BCW67C = DC BCW68F = DF BCW68G = DG BCW68H = DH Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 BCW68 TRANSISTOR (PNP) FEATURES 1. BASE 2. EMITTER Complementary to BCW66, BCW68 is subdivided into 3. COLLECTOR three groups F, G and H according to its DC current gain. MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -60 V

SEMICONDUCTOR BCW68 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. E L B L DIM MILLIMETERS _ + 2.93 0.20 A B 1.30+0.20/-0.15 C 1.30 MAX 2 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 MAXIMUM RATING (Ta=25 ) H 0.95 J 0.13+0.10/-0.05 CHARACTERISTIC SYMBOL RATING UNIT K 0.00 0.10 L 0.55 P P VCBO -60 V Collector-Base Voltage M 0.20 MIN N 1.

FM120-M WILLAS BCW68GLT1THRU General Purpose Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Produ Package outline Features Batch proces PNP Silicons design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to

BCW68 PNP Silicon Epitaxial Planar Transistor for high current application The transistor is subdivided into three groups F, G and H according to its DC current gain. SOT-23 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage -VCBO 60 V Collector Emitter Voltage -VCEO 45 V Emitter Base Voltage -VEBO 5 V Collector Current -

SMD Type Transistors PNP Transistors BCW68 (KCW68) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 Features 3 Complementary to BCW66, BCW68 is subdivided into three groups F, G and H according to its DC current gain. 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Coll