BCW68RH . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BCW68GLT1/DGeneral Purpose TransistorBCW68GLT1PNP SiliconCOLLECTOR313BASE122EMITTERMAXIMUM RATINGSCASE 31808, STYLE 6Rating Symbol Value UnitSOT23 (TO236AB)CollectorEmitter Voltage VCEO 45 VdcCollectorBase Voltage VCBO 60 VdcEmitterBase Voltage VEBO 5.0 VdcCollector

BCW68GCESOT-23BMark: DGPNP General Purpose AmplifierThis device is designed for general purpose amplifier and switchingapplications at currents to 500 mA. Sourced from Process 63.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 45 VVCBO Collector-Base Voltage 60 V3VEBO Emitter-Base Voltage 5.0 VIC

BCW68 series45 V, 800 mA PNP general-purpose transistorRev. 1 21 April 2017 Product data sheet1 General descriptionPNP general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device(SMD) plastic package.NPN complements: BCW66F/G/H2 Features and benefits High current AEC-Q101 qualified3 Applications General-purpose switching and amplification4

PNP Silicon AF Transistors BCW 67BCW 68 For general AF applications High current gain Low collector-emitter saturation voltage Complementary types: BCW 65, BCW 66 (NPN)Type Marking Ordering Code Pin Configuration Package1)(tape and reel) 1 2 3BCW 67 A DAs Q62702-C1560 B E C SOT-23BCW 67 B DBs Q62702-C1480BCW 67 C DCs Q62702-C1681BCW 68 F DFs Q62702-C1893BCW 68 G DGs Q627

A Product Line ofDiodes IncorporatedBCW68H45V PNP MEDIUM POWER TRANSISTOR IN SOT23 Features Mechanical Data BVCEO > -45V Case: SOT23 IC = -800mA high Continuous Collector Current Case Material: molded plastic, Green molding compound Low Saturation Voltage VCE(sat)

SOT23 PNP SILICON PLANARBCW67MEDIUM POWER TRANSISTORSBCW68ISSUE 4 - JUNE 1996 T I D T I D . D EC D 8 D 8 T 8 D 8 TB 8 D 8 T T SOT23 8 ABSOLUTE MAXIMUM RATINGS. T 8 IT II i V I V V II i V I V V i V I V V I I i II I 8 I V V Di i i T V i T T T V V V V V V V V BCW67BCW68ELECTRICAL CHARACT

BCW67, BCW68PNP Silicon AF Transistors For general AF applications23 High current gain1 Low collector-emitter saturation voltage Complementary types: BCW66... (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q101Type Marking Pin Configuration PackageBCW67A DAs 1=B 2=E 3=C SOT23 BCW67B DBs 1=B 2=E 3=C SOT23 BCW67C DCs 1=B 2=E 3=C SOT23

BCW68GFeatures Ideally Suited for Automatic Insertion Low Current, Low Voltage Epitaxial Planar Die Construction Halogen Free. "Green" Device (Note 1) PNP Small Moisture Sensitivity Level 1Signal Transistor Epoxy Meets UL 94 V-0 Flammability Rating Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ordering Information)Maximum R

BCW68HFeatures Ideally Suited for Automatic Insertion Low Current, Low Voltage Epitaxial Planar Die Construction Halogen Free. Green Device (Note 1) PNP Small Moisture Sensitivity Level 1Signal Transistor Epoxy Meets UL 94 V-0 Flammability Rating Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ordering Information)Maxim

BCW68GLGeneral Purpose TransistorPNP SiliconFeatures NSV Prefix for Automotive and Other Applications Requiring www.onsemi.comUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable COLLECTOR3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASE2MAXIMUM RATINGSEMITTERRating Symbol Value UnitCollector-Emitter Vo

BCW68GLT1GGeneral Purpose TransistorPNP SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHShttp://onsemi.comCompliantCOLLECTOR31MAXIMUM RATINGSBASERating Symbol Value UnitCollector-Emitter Voltage VCEO -45 Vdc2EMITTERCollector-Base Voltage VCBO -60 VdcEmitter-Base Voltage VEBO -5.0 VdcCollector Current - Continuous IC -800 mAdc3

BCW68GLGeneral Purpose TransistorPNP SiliconFeatures NSV Prefix for Automotive and Other Applications Requiring www.onsemi.comUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable COLLECTOR3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASE2MAXIMUM RATINGSEMITTERRating Symbol Value UnitCollector-Emitter Vo

BCW68GLGeneral Purpose TransistorPNP SiliconFeatures NSV Prefix for Automotive and Other Applications Requiring www.onsemi.comUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable COLLECTOR3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASE2MAXIMUM RATINGSEMITTERRating Symbol Value UnitCollector-Emitter Vo

BCW68 PNP Plastic-Encapsulate Transistors Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23AFEATURES L33 Complementary to BCW66. Top View C BCOLLECTOR11 232K ED1H JMARKING: F GBASEBCW68F:DF Millimeter MillimeterBCW68G:DG REF. REF.Min. Max. Min. Max.2BCW68H:DH A 2.70 3.04 G - 0.18

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySOT-23 Formed SMD PackageBCW67, A, B, CBCW68, F, G, HGENERAL PURPOSE TRANSISTORPNP transistorMarkingPACKAGE OUTLINE DETAILSBCW67A = DAALL DIMENSIONS IN mmBCW67B = DBBCW67C = DCBCW68F = DFBCW68G = DGBCW68H = DHPin configuration1 = BASE2 = EMITTER3 = COLLECTOR31

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate TransistorsSOT-23BCW68 TRANSISTOR (PNP)FEATURES 1. BASE 2. EMITTERComplementary to BCW66, BCW68 is subdivided into3. COLLECTOR three groups F, G and H according to its DC current gain. MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -60 V

SEMICONDUCTORBCW68TECHNICAL DATAEPITAXIAL PLANAR PNP TRANSISTORHIGH CURRENT APPLICATION.EL B LDIM MILLIMETERS_+2.93 0.20AB 1.30+0.20/-0.15C 1.30 MAX23 D 0.45+0.15/-0.05E 2.40+0.30/-0.201G 1.90MAXIMUM RATING (Ta=25 )H 0.95J 0.13+0.10/-0.05CHARACTERISTIC SYMBOL RATING UNITK 0.00 ~ 0.10L 0.55P PVCBO -60 VCollector-Base VoltageM 0.20 MINN 1.

FM120-M WILLASBCW68GLT1THRUGeneral Purpose TransistorsFM1200-M1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProduPackage outlineFeatures Batch procesPNP Silicons design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to

BCW68 PNP Silicon Epitaxial Planar Transistor for high current application The transistor is subdivided into three groups F, G and H according to its DC current gain. SOT-23 Plastic Package OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage -VCBO 60 VCollector Emitter Voltage -VCEO 45 VEmitter Base Voltage -VEBO 5 VCollector Current -

SMD Type TransistorsPNP TransistorsBCW68 (KCW68)SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.1 Features 3 Complementary to BCW66, BCW68 is subdivided into three groups F, G and H according to its DC current gain.1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Coll