BCW70 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

DISCRETE SEMICONDUCTORSDATA SHEETok, halfpageM3D088BCW69; BCW70PNP general purpose transistors1999 Apr 19Product specificationSupersedes data of 1997 Mar 06Philips Semiconductors Product specificationPNP general purpose transistors BCW69; BCW70FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 45 V).1 base2 emitterAPPLICATIONS3

DISCRETE SEMICONDUCTORS DATA SHEETBCW69; BCW70PNP general purpose transistorsProduct data sheet 2004 Feb 06Supersedes data of 1999 Apr 19NXP Semiconductors Product data sheetPNP general purpose transistors BCW69; BCW70FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 45 V).1 base2 emitterAPPLICATIONS3 collector General purpose

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

SOT23 PNP PLANAR BCW69SMALL SIGNAL TRANSISTORSBCW70 ISSUE 2 FEBRUARY 1995 T I D T I ECBSOT23ABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V V II i V I I V V 8 i V I V V I I i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T I T IT DITI II I I V V I V V T i V I V V I V V

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySOT-23 Formed SMD Package BCW69BCW70SILICON PLANAR EPITAXIAL TRANSISTORSPNP transistorsMarkingBCW69 = H1BCW70 = H2Pin configuration1 = BASE2 = EMITTER3 = COLLECTOR312ABSOLUTE MAXIMUM RATINGSBCW69 BCW70D.C. current gain at Tj = 25 C > 120 215= IC = 2 mA;

SEMICONDUCTORBCW69/70/89TECHNICAL DATAEPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.EL B LDIM MILLIMETERSFEATURES_+2.93 0.20AB 1.30+0.20/-0.15Super Mini Packaged Transistors for Hybrid circuits.C 1.30 MAX2For Complementary with NPN Type BCW71/72, BCV71. 3 D 0.45+0.15/-0.05E 2.40+0.30/-0.201G 1.90H 0.95J 0.13+0.10/

SMD Type TransistorsPNP TransistorsBCW69~BCW70 (KCW69~KCW70)SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.1 Features 3 Low current (max. 100 mA) Low voltage (max. 45 V). NPN complements: BCW71 and BCW72.1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Coll

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BCW69LT1/DGeneral Purpose TransistorsBCW69LT1PNP SiliconBCW70LT1COLLECTOR313BASE12 2EMITTERCASE 31808, STYLE 6SOT23 (TO236AB)MAXIMUM RATINGSRating Symbol Value UnitCollectorEmitter Voltage VCEO 45 VdcEmitterBase Voltage VEBO 5.0 VdcCollector Current Continuous IC 100

BCW69BCW70SMALL SIGNAL PNP TRANSISTORSType MarkingBCW69 H1BCW70 H2 SILICON EPITAXIAL PLANAR PNPTRANSISTORS MINIATURE PLASTIC PACKAGE FOR 2APPLICATION IN SURFACE MOUNTING3CIRCUITS1 LOW LEVEL AUDIO AMPLIFICATION ANDSWITCHINGSOT-23INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Collector-Emitter Voltage (V = 0) -50 VCES BEVCE

BCW70LT1GGeneral Purpose TransistorPNP SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHShttp://onsemi.comCompliantCOLLECTOR3MAXIMUM RATINGSRating Symbol Value Unit1BASECollector-Emitter Voltage VCEO -45 VdcEmitter-Base Voltage VEBO -5.0 Vdc2Collector Current - Continuous IC -100 mAdcEMITTERTHERMAL CHARACTERISTICSCharacteristic

BCW70LT1GGeneral Purpose TransistorPNP SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSwww.onsemi.comCompliantCOLLECTOR3MAXIMUM RATINGSRating Symbol Value Unit1BASECollector-Emitter Voltage VCEO -45 VdcEmitter-Base Voltage VEBO -5.0 Vdc2Collector Current - Continuous IC -100 mAdcEMITTERTHERMAL CHARACTERISTICSCharacteristic Sy

FM120-M BCW69LT1WILLASTHRUBCW70LT1General Purpose TransistorsFM1200-M1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProducPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.PNP SiliconSOD-123H LoFeatruesw profile surface mounted applica