BCY58-9 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BCY58-9
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1 W
Tensión colector-base (Vcb): 32 V
Tensión colector-emisor (Vce): 32 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 0.2 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 125 MHz
Capacitancia de salida (Cc): 6 pF
Ganancia de corriente contínua (hfe): 250
Paquete / Cubierta: TO18
Búsqueda de reemplazo de transistor bipolar BCY58-9
BCY58-9 Datasheet (PDF)
bcy58 bcy59 cnv 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D125BCY58; BCY59NPN switching transistors1997 Jun 17Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN switching transistors BCY58; BCY59FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 45 V).1 emitter2 ba
bcy58.pdf
BCY58BCY59LOW NOISE AUDIO AMPLIFIERSDESCRIPTIONThe BCY58 and BCY59 are silicon planar epitaxialNPN transistors in Jedec TO-18 metal case.They are intended for use in audio input stages,driver stages and low-noise input stages. The com-plementary PNP types are respectively the BCY78and BCY79.TO-18INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSValueSymbol Parameter
bcy58 bcy59.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS BCY58, BCY59TO-18Low Noise Audio Amplifier Input Stages & Driver ApplicationsComplementary BCY78/79ABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL BCY58 BCY59 UNITSCollector -Emitter Voltage VCEO 32 45 VCollector -Emitter Voltage(RBE=10 ohm
Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP31C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
