BCY58B . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BCY58B
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.39 W
Tensión colector-base (Vcb): 32 V
Tensión colector-emisor (Vce): 32 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 120 MHz
Capacitancia de salida (Cc): 7 pF
Ganancia de corriente contínua (hfe): 175
Paquete / Cubierta: TO18
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BCY58B Datasheet (PDF)
bcy58 bcy59 cnv 2.pdf
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DISCRETE SEMICONDUCTORSDATA SHEETM3D125BCY58; BCY59NPN switching transistors1997 Jun 17Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN switching transistors BCY58; BCY59FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 45 V).1 emitter2 ba
bcy58.pdf
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BCY58BCY59LOW NOISE AUDIO AMPLIFIERSDESCRIPTIONThe BCY58 and BCY59 are silicon planar epitaxialNPN transistors in Jedec TO-18 metal case.They are intended for use in audio input stages,driver stages and low-noise input stages. The com-plementary PNP types are respectively the BCY78and BCY79.TO-18INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSValueSymbol Parameter
bcy58 bcy59.pdf
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Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS BCY58, BCY59TO-18Low Noise Audio Amplifier Input Stages & Driver ApplicationsComplementary BCY78/79ABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL BCY58 BCY59 UNITSCollector -Emitter Voltage VCEO 32 45 VCollector -Emitter Voltage(RBE=10 ohm
Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .