BCY59CP . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BCY59CP
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.39 W
Tensión colector-base (Vcb): 45 V
Tensión colector-emisor (Vce): 45 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 120 MHz
Capacitancia de salida (Cc): 7 pF
Ganancia de corriente contínua (hfe): 250
Paquete / Cubierta: TO92
Búsqueda de reemplazo de transistor bipolar BCY59CP
BCY59CP Datasheet (PDF)
bcy58 bcy59 cnv 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D125BCY58; BCY59NPN switching transistors1997 Jun 17Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN switching transistors BCY58; BCY59FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 45 V).1 emitter2 ba
bcy59.pdf
BCY59SMALL SIGNAL NPN TRANSISTORDESCRIPTION The BCY59 is a silicon Planar Epitaxial NPNtransistor in Jedec TO-18 metal case. It isintented for use in audio input stages, driverstages and low-noise input stages.The PNP complementary type Is BCY79.TO-18INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitVCES Collector-Emitter Voltage (VBE = 0)
bcy59 2.pdf
BCY59SMALL SIGNAL NPN TRANSISTORDESCRIPTION The BCY59 is a silicon Planar Epitaxial NPNtransistor in Jedec TO-18 metal case. It isintented for use in audio input stages, driverstages and low-noise input stages.The PNP complementary type Is BCY79.TO-18INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitVCES Collector-Emitter Voltage (VBE = 0)
bcy59dcsm.pdf
BCY59DCSMDimensions in mm (inches). Dual Bipolar NPN Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 0.152.29 0.20 1.65 0.13(0.055 0.006)(0.09 0.008) (0.065 0.005)Applications 2 314Dual Bipolar NPN Devices. A0.236 5rad. (0.009) V = 45V CEO6.22 0.13 A = 1.27 0.13I = 0.2A C(0.05
bcy58 bcy59.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS BCY58, BCY59TO-18Low Noise Audio Amplifier Input Stages & Driver ApplicationsComplementary BCY78/79ABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL BCY58 BCY59 UNITSCollector -Emitter Voltage VCEO 32 45 VCollector -Emitter Voltage(RBE=10 ohm
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: 2SB1296S
History: 2SB1296S
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050