BCY59CSM Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BCY59CSM
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.36 W
Tensión colector-base (Vcb): 45 V
Tensión colector-emisor (Vce): 45 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 0.2 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 125 MHz
Capacitancia de salida (Cc): 7 pF
Ganancia de corriente contínua (hFE): 120
Encapsulados: LCC3
Búsqueda de reemplazo de BCY59CSM
- Selecciónⓘ de transistores por parámetros
BCY59CSM datasheet
bcy58 bcy59 cnv 2.pdf
DISCRETE SEMICONDUCTORS DATA SHEET M3D125 BCY58; BCY59 NPN switching transistors 1997 Jun 17 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN switching transistors BCY58; BCY59 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 45 V). 1 emitter 2 ba
bcy59.pdf
BCY59 SMALL SIGNAL NPN TRANSISTOR DESCRIPTION The BCY59 is a silicon Planar Epitaxial NPN transistor in Jedec TO-18 metal case. It is intented for use in audio input stages, driver stages and low-noise input stages. The PNP complementary type Is BCY79. TO-18 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCES Collector-Emitter Voltage (VBE = 0)
bcy59 2.pdf
BCY59 SMALL SIGNAL NPN TRANSISTOR DESCRIPTION The BCY59 is a silicon Planar Epitaxial NPN transistor in Jedec TO-18 metal case. It is intented for use in audio input stages, driver stages and low-noise input stages. The PNP complementary type Is BCY79. TO-18 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCES Collector-Emitter Voltage (VBE = 0)
bcy59dcsm.pdf
BCY59DCSM Dimensions in mm (inches). Dual Bipolar NPN Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 0.15 2.29 0.20 1.65 0.13 (0.055 0.006) (0.09 0.008) (0.065 0.005) Applications 2 3 1 4 Dual Bipolar NPN Devices. A 0.23 6 5 rad. (0.009) V = 45V CEO 6.22 0.13 A = 1.27 0.13 I = 0.2A C (0.05
Otros transistores... BCY59-8, BCY59-9, BCY59A, BCY59AP, BCY59B, BCY59BP, BCY59C, BCY59CP, MJE340, BCY59D, BCY59DP, BCY59QF, BCY65, BCY65E, BCY65E7, BCY65E8, BCY65E9
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
2sc870 | 2sa771 | d667 | a965 transistor | hy3210 | d313 transistor equivalent | 2sb827 | c5200 datasheet