BCY59DP . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BCY59DP
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.39 W
Tensión colector-base (Vcb): 45 V
Tensión colector-emisor (Vce): 45 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 120 MHz
Capacitancia de salida (Cc): 7 pF
Ganancia de corriente contínua (hfe): 350
Paquete / Cubierta: TO92
Búsqueda de reemplazo de transistor bipolar BCY59DP
BCY59DP Datasheet (PDF)
bcy59dcsm.pdf
BCY59DCSMDimensions in mm (inches). Dual Bipolar NPN Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 0.152.29 0.20 1.65 0.13(0.055 0.006)(0.09 0.008) (0.065 0.005)Applications 2 314Dual Bipolar NPN Devices. A0.236 5rad. (0.009) V = 45V CEO6.22 0.13 A = 1.27 0.13I = 0.2A C(0.05
bcy58 bcy59 cnv 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D125BCY58; BCY59NPN switching transistors1997 Jun 17Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN switching transistors BCY58; BCY59FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 45 V).1 emitter2 ba
bcy59.pdf
BCY59SMALL SIGNAL NPN TRANSISTORDESCRIPTION The BCY59 is a silicon Planar Epitaxial NPNtransistor in Jedec TO-18 metal case. It isintented for use in audio input stages, driverstages and low-noise input stages.The PNP complementary type Is BCY79.TO-18INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitVCES Collector-Emitter Voltage (VBE = 0)
bcy59 2.pdf
BCY59SMALL SIGNAL NPN TRANSISTORDESCRIPTION The BCY59 is a silicon Planar Epitaxial NPNtransistor in Jedec TO-18 metal case. It isintented for use in audio input stages, driverstages and low-noise input stages.The PNP complementary type Is BCY79.TO-18INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitVCES Collector-Emitter Voltage (VBE = 0)
bcy58 bcy59.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS BCY58, BCY59TO-18Low Noise Audio Amplifier Input Stages & Driver ApplicationsComplementary BCY78/79ABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL BCY58 BCY59 UNITSCollector -Emitter Voltage VCEO 32 45 VCollector -Emitter Voltage(RBE=10 ohm
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Liste
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