BD130 Todos los transistores

 

BD130 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BD130
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 100 W
   Tensión colector-base (Vcb): 100 V
   Tensión colector-emisor (Vce): 60 V
   Tensión emisor-base (Veb): 7 V
   Corriente del colector DC máxima (Ic): 15 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 1 MHz
   Ganancia de corriente contínua (hfe): 20
   Paquete / Cubierta: TO3
 

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BD130 Datasheet (PDF)

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 bd130.pdf pdf_icon

BD130

BD130NPN SILICON TRANSISTORPOWER LINERAR AND SWITCHING APPLICATIONSThe BD130 is a silicon epitaxial-base NPN transistor in JEDEC TO-3 metal case. It is intended for power switching circuits, series andshunt regulators, output stages and high fidelity amplifiers.ABSOLUTE MAXIMUM RATINGSSymbol Ratings Value UnitVCEO Collector-Emitter Voltage 60 VCollector-Base VoltageVCBO 100

 0.1. Size:765K  secos
 bd13003b.pdf pdf_icon

BD130

BD13003B 1.5A , 700V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-126 Power Switching Applications CLASSIFICATION OF ts Product-Rank BD13003B-A1 BD13003B-A2 ABRange 2-2.5 (s) 2.5-3 (s) EFProduct-Rank BD13003B-B1 BD13003B-B2 CNHRange 3-3.5 (s) 3.5

 0.2. Size:256K  winsemi
 wbd13003d.pdf pdf_icon

BD130

WBD13003DWBD13003DWBD13003DWBD13003DHighVoltageFast-SwitchingNPNPowerTransistorFeaturessymbolsymbolsymbolsymbol Very High Switching Speed2.Collector High Voltage Capability Wide Reverse Bias SOA 1.Base Built-in free wheeling diode3.EmitterGeneral DescriptionThis Device is designed for high Voltage ,High speedswitching Characteristics required such

Otros transistores... BD120 , BD121 , BD123 , BD124 , BD124A , BD127 , BD128 , BD129 , 2SC2240 , BD130Y , BD131 , BD131A , BD132 , BD132A , BD133 , BD135 , BD135-10 .

 

 
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