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BD135G Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BD135G
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 12.5 W
   Tensión colector-base (Vcb): 45 V
   Tensión colector-emisor (Vce): 45 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 1.5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 50 MHz
   Ganancia de corriente contínua (hfe): 40
   Paquete / Cubierta: TO126
 

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BD135G datasheet

 ..1. Size:128K  onsemi
bd135g bd137g bd139g.pdf pdf_icon

BD135G

BD135G, BD137G, BD139G Plastic Medium-Power Silicon NPN Transistors This series of plastic, medium-power silicon NPN transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. http //onsemi.com Features 1.5 A POWER TRANSISTORS High DC Current Gain NPN SILICON BD 135, 137, 139 are complementary with BD 136, 138, 14... See More ⇒

 ..2. Size:80K  onsemi
bd139g bd135tg bd135g bd137g.pdf pdf_icon

BD135G

BD135G, BD137G, BD139G Plastic Medium-Power Silicon NPN Transistors This series of plastic, medium-power silicon NPN transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. http //onsemi.com Features 1.5 A POWER TRANSISTORS High DC Current Gain NPN SILICON BD 135, 137, 139 are complementary with BD 136, 138, 14... See More ⇒

 9.1. Size:100K  motorola
bd135 bd137 bd139.pdf pdf_icon

BD135G

Order this document MOTOROLA by BD135/D SEMICONDUCTOR TECHNICAL DATA BD135 BD137 Plastic Medium Power Silicon BD139 NPN Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. 1.5 AMPERE POWER TRANSISTORS DC Current Gain hFE = 40 (Min) @ IC = 0.15 Adc NPN SILICON BD 135, 137, 139 are complementary with... See More ⇒

 9.2. Size:49K  philips
bd135 bd137 bd139 3.pdf pdf_icon

BD135G

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D100 BD135; BD137; BD139 NPN power transistors 1999 Apr 12 Product specification Supersedes data of 1997 Mar 04 Philips Semiconductors Product specification NPN power transistors BD135; BD137; BD139 FEATURES PINNING High current (max. 1.5 A) PIN DESCRIPTION Low voltage (max. 80 V). 1 emitter 2 collector, connected to m... See More ⇒

Otros transistores... BD131A , BD132 , BD132A , BD133 , BD135 , BD135-10 , BD135-16 , BD135-6 , A42 , BD136 , BD136-10 , BD136-16 , BD136-6 , BD136G , BD137 , BD137-10 , BD137-16 .

History: MJE803G

 

 
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