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BD139-6 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BD139-6

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 12 W

Tensión colector-base (Vcb): 80 V

Tensión colector-emisor (Vce): 80 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 50 MHz

Ganancia de corriente contínua (hfe): 40

Empaquetado / Estuche: TO126

Búsqueda de reemplazo de transistor bipolar BD139-6

 

BD139-6 Datasheet (PDF)

9.1. bd135 bd137 bd139.pdf Size:100K _motorola

BD139-6
BD139-6

Order this documentMOTOROLAby BD135/DSEMICONDUCTOR TECHNICAL DATABD135BD137Plastic Medium Power SiliconBD139NPN Transistor. . . designed for use as audio amplifiers and drivers util

9.2. bd135 bd137 bd139 3.pdf Size:49K _philips

BD139-6
BD139-6

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D100BD135; BD137; BD139NPN power transistors1999 Apr 12Product specificationSupersedes data of 1997 Mar 04Philips Semiconductors Product specificationNPN power transistors BD135; BD137; BD139FEATURES PINNING High current (max. 1.5 A)PIN DESCRIPTION Low voltage (max. 80 V).1 emitter2 collector, connected to m

 9.3. bd135 bd139.pdf Size:74K _st

BD139-6
BD139-6

BD135BD139NPN SILICON TRANSISTORSType MarkingBD135 BD135BD135-10 BD135-10BD135-16 BD135-16BD139 BD139BD139-10 BD139-10BD139-16 BD139-1612 STMicroelectronics PREFERRED3SALESTYPESSOT-32DESCRIPTION The BD135 and BD139 are silicon EpitaxialPlanar NPN transistors mounted in JedecSOT-32 plastic package, designed for audioamplifiers and drivers utilizing com

9.4. bd135 bd136 bd139 bd140.pdf Size:155K _st

BD139-6
BD139-6

BD135 - BD136BD139 - BD140Complementary low voltage transistorFeatures Products are pre-selected in DC current gainApplication General purpose123DescriptionSOT-32These epitaxial planar transistors are mounted in the SOT-32 plastic package. They are designed for audio amplifiers and drivers utilizing complementary or quasi-complementary circuits. The NPN typ

 9.5. bd135 bd137 bd139.pdf Size:44K _st

BD139-6
BD139-6

BD135BD137/BD139NPN SILICON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPESDESCRIPTIONThe BD135, BD137 and BD139 are siliconepitaxial planar NPN transistors in Jedec SOT-32plastic package, designed for audio amplifiersand drivers utilizing complementary or quasicompementary circuits.The complementary PNP types are the BD13612BD138 and BD140.3SOT-32INTERNAL SCHEMATIC

9.6. bd135 bd137 bd139.pdf Size:41K _fairchild_semi

BD139-6
BD139-6

BD135/137/139Medium Power Linear and Switching Applications Complement to BD136, BD138 and BD140 respectivelyTO-12611. Emitter 2.Collector 3.BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage : BD135 45 V : BD137 60 V : BD139 80 V VCEO Collector-Emitter Voltage : BD135

9.7. bd135 bd137 bd139.pdf Size:51K _samsung

BD139-6
BD139-6

BD135/137/139 NPN EPITAXIAL SILICON TRANSISTORMEDIUM POWER LINEAR ANDTO-126SWITCHING APPLICATIONS Complement to BD136, BD138 and BD140 respectivelyABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector Base Voltage : BD135 VCBO 45 V : BD137 60 V : BD139 80 V Collector Emitter Voltage : BD135 VCEO 45 V : BD137 60 V : BD139 80 V 1. Emitter 2.Collector 3.Bas

9.8. bd139.pdf Size:135K _utc

BD139-6
BD139-6

UNISONIC TECHNOLOGIES CO., LTD BD139 NPN SILICON TRANSISTOR NPN POWER TRANSISTORS FEATURES * High current (max.1.5A) 1* Low voltage (max.80V) TO-2511TO-126 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 BD139L-xx-T60-K BD139G-xx-T60-K TO-126 E C B BulkBD139L-xx-TM3-T BD139G-xx-TM3-T TO-251 B C E TubeBD139L-xx

9.9. bd135-bd137-bd139.pdf Size:80K _secos

BD139-6
BD139-6

BD135 / BD137 / BD139 NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-126 High current Complement to BD136, BD138 and BD140 1Emitter 1112Collector 2223Base 333CLASSIFICATION OF hFE (1) AProduct-Rank BD135-6 BD135-10 BD135-16 BEFProduct-Rank BD13

9.10. bd135 bd137 bd139.pdf Size:246K _cdil

BD139-6
BD139-6

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN EPITAXIAL SILICON POWER TRANSISTORS BD135 BD137BD139TO126 Plastic PackageECBDesigned for use as Audio Amplifier and Drivers UtilizingComplementary BD136, BD138, BD140ABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL BD135 BD137 BD139 UNITCollector -Emitter Voltage VCEO 45 60 80 VCol

9.11. bd139.pdf Size:31K _kec

BD139-6
BD139-6

SEMICONDUCTOR BD139TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.ABDCFEATURESEHigh Current. (Max. : 1.5A)FDC Current Gain : hFE=40Min. @IC=0.15AComplementary to BD140.GHDIM MILLIMETERSJA 8.3 MAXKB 5.8LC 0.7_+D 3.2 0.1MAXIMUM RATING (Ta=25)E 3.5_+F 11.0 0.3CHARACTERISTIC SYMBOL RATING UNITG 2.9 M

9.12. bd135 bd137 bd139.pdf Size:191K _lge

BD139-6
BD139-6

BD135/BD137/BD139(NPN) TO-126 TransistorTO-1261. EMITTER 2. COLLECTOR 3. BASE 3 21 Features High Current(1.5A) Low Voltage(80V) 2.5007.400 Dimensions in inches and (millimeters)2.9001.100MAXIMUM RATINGS (TA=25 unless otherwise noted ) 7.8001.500Va3.900lue 3.000Symbol Parameter 4.100 Units 3.200BD135 BD137 BD13910.6000.00011.0000

9.13. bd135 bd137 bd139.pdf Size:329K _wietron

BD139-6
BD139-6

BD135/137/139NPN Epitaxial Planar Transistors1. EMITTER2. COLLECTORP b Lead(Pb)-Free3. BASE123TO-126ABSOLUTE MAXIMUM RATINGS(TA=25C)Rating Symbol BD135 BD137 BD139 UnitVCBO45 60 80 VCollector-Emitter VoltageVCEO45 60 80 VCollector-Base VoltageVEBOEmitter-Base Voltage 5.0 5.0 5.0 VCollector Current IC1.5 APD1.25 WPower DisspationTj150 CJu

9.14. stbd135t stbd137t stbd139t.pdf Size:454K _semtech

BD139-6
BD139-6

BD135T / BD137T / BD139T NPN SILICON EPITAXIAL POWER TRANSISTOR These devices are designed as Audio Amplifier and Drivers Utilizing. ECB TO-126 Plastic Package OAbsolute Maximum Ratings (Ta=25 C) Value Parameter Symbol Unit BD135T BD137T BD139TCollector Emitter Voltage VCEO 45 60 80 VCollector Emitter Voltage ( RBE = 1 K) VCER 45 60 100 VCollector Base Vo

9.15. hsbd139.pdf Size:59K _shantou-huashan

BD139-6
BD139-6

NPN SILICON TRANSIST OR Shantou Huashan Electronic Devices Co.,Ltd. HSBD139 APPLICATIONS Medium Power Linear switching Applications ABSOLUTE MAXIMUM RATINGSTa=25 TstgStorage Temperature -55~150TjJunction Temperature 150PCCollector DissipationTc=25

9.16. bd139.pdf Size:207K _inchange_semiconductor

BD139-6
BD139-6

isc Silicon NPN Power Transistor BD139DESCRIPTIONDC Current Gain-: h = 40(Min)@ I = 0.15AFE CCollector-Emitter Sustaining Voltage -: V = 80V(Min)CEO(SUS)Complement to type BD140Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as audio amplifiers and drivers utilizingcomplementary or quasi complement

9.17. bd135 bd137 bd139.pdf Size:117K _inchange_semiconductor

BD139-6
BD139-6

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD135 BD137 BD139 DESCRIPTION With TO-126 package High current Complement to type BD136/138/140 APPLICATIONS Driver stages in high-fidelity amplifiers and television circuits PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings (T

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