BD175 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BD175
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 30 W
Tensión colector-base (Vcb): 45 V
Tensión colector-emisor (Vce): 45 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 3 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 3 MHz
Ganancia de corriente contínua (hFE): 40
Encapsulados: TO126
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BD175 datasheet
bd175 bd177 bd179.pdf
BD175/177/179 Medium Power Linear and Switching Applications Complement to BD 176/178/180 respectively TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO *Collector-Base Voltage BD175 45 V BD177 60 V BD179 80 V VCEO Collector-Emitter Voltage BD175 45 V
bd175 bd176 bd177 bd178 bd179 bd180.pdf
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company BD176 EPITAXIAL SILICON POWER TRANSISTORS BD175 BD178 BD177 BD180 BD179 NPN PNP TO126 Plastic Package E C B Intended for use in Medium Power Linear Switching Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL BD175 BD177 BD179 UNIT BD176 BD178 BD180 Collector -Emitter Voltage VCE
bd175.pdf
isc Silicon NPN Power Transistor BD175 DESCRIPTION DC Current Gain- h = 40-250(Min)@ I = 0.15A FE C Collector-Emitter Sustaining Voltage - V = 45V(Min) CEO(SUS) Complement to type BD176 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for medium power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(T
Otros transistores... BD166 , BD167 , BD168 , BD169 , BD170 , BD171 , BD172 , BD173 , D209L , BD175-10 , BD175-16 , BD175-6 , BD176 , BD176-10 , BD176-16 , BD176-6 , BD177 .
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