BD176-6 Todos los transistores

 

BD176-6 Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BD176-6
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 30 W
   Tensión colector-base (Vcb): 45 V
   Tensión colector-emisor (Vce): 45 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 3 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 3 MHz
   Ganancia de corriente contínua (hfe): 40
   Paquete / Cubierta: TO126
 

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BD176-6 PDF detailed specifications

 9.1. Size:40K  fairchild semi
bd176 bd178 bd180.pdf pdf_icon

BD176-6

BD176/178/180 Medium Power Linear and Switching Applications Complement to BD 175/177/179 respectively TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO *Collector-Base Voltage BD176 - 45 V BD178 - 60 V BD180 - 80 V VCEO Collector-Emitter Voltage BD176 -... See More ⇒

 9.2. Size:217K  cdil
bd175 bd176 bd177 bd178 bd179 bd180.pdf pdf_icon

BD176-6

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company BD176 EPITAXIAL SILICON POWER TRANSISTORS BD175 BD178 BD177 BD180 BD179 NPN PNP TO126 Plastic Package E C B Intended for use in Medium Power Linear Switching Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL BD175 BD177 BD179 UNIT BD176 BD178 BD180 Collector -Emitter Voltage VCE... See More ⇒

 9.3. Size:122K  shantou-huashan
hsbd176.pdf pdf_icon

BD176-6

PNP SILICON TRANSISTOR Shantou Huashan Electronic Devices Co.,Ltd. HSBD176 APPLICATIONS Medium Power Linear switching Applications ABSOLUTE MAXIMUM RATINGS Ta=25 Tstg Storage Temperature -55 150 Tj Junction Temperature 150 PC Collector Dissipation Tc=25 ... See More ⇒

 9.4. Size:213K  inchange semiconductor
bd176.pdf pdf_icon

BD176-6

isc Silicon PNP Power Transistor BD176 DESCRIPTION DC Current Gain- h = 40-250(Min)@ I = -0.15A FE C Collector-Emitter Sustaining Voltage - V = -45V(Min) CEO(SUS) Complement to type BD175 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for medium power linear and switching applications. ABSOLUTE MAXIMUM RATINGS... See More ⇒

Otros transistores... BD173 , BD175 , BD175-10 , BD175-16 , BD175-6 , BD176 , BD176-10 , BD176-16 , TIP2955 , BD177 , BD177-10 , BD177-6 , BD178 , BD178-10 , BD178-6 , BD179 , BD179-10 .

 

 
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