BD231-16 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BD231-16

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 10 W

Tensión colector-base (Vcb): 100 V

Tensión colector-emisor (Vce): 100 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 1.5 A

Temperatura operativa máxima (Tj): 125 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 60 MHz

Ganancia de corriente contínua (hFE): 100

Encapsulados: TO126

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BD231-16 datasheet

 9.1. Size:49K  philips
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BD231-16

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D100 BD231 PNP power transistor 1999 Apr 21 Product specification Supersedes data of 1997 Mar 04 Philips Semiconductors Product specification PNP power transistor BD231 FEATURES PINNING High current (max. 1.5 A) PIN DESCRIPTION Low voltage (max. 80 V). 1 emitter 2 collector, connected to metal part of APPLICATIONS mou

 9.2. Size:117K  inchange semiconductor
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BD231-16

Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD231 DESCRIPTION With TO-126 package Complement to type BD230 High current (Max -1.5A) Low voltage (Max -80V) APPLICATIONS Drive stage in TV circuits PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings (Ta=25 ) SYMBOL PAR

 9.3. Size:142K  inchange semiconductor
 bd227 bd229 bd231.pdf pdf_icon

BD231-16

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor BD227/229/231 DESCRIPTION DC Current Gain- hFE= 40(Min)@ IC= -0.15A Complement to Type BD226/228/230 APPLICATIONS Designed for use in driver stages in television circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT BD227 -45 VCBO Collector-Base Voltage BD229 -60 V

Otros transistores... BD229-16, BD229-6, BD230, BD230-10, BD230-16, BD230-6, BD231, BD231-10, D965, BD231-6, BD232, BD232G, BD233, BD233-10, BD233-16, BD233-6, BD233G