BD234-6 Todos los transistores

 

BD234-6 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BD234-6
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 25 W
   Tensión colector-base (Vcb): 45 V
   Tensión colector-emisor (Vce): 45 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 2 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 3 MHz
   Ganancia de corriente contínua (hfe): 40
   Paquete / Cubierta: TO126

 Búsqueda de reemplazo de transistor bipolar BD234-6

 

BD234-6 Datasheet (PDF)

 9.1. Size:62K  st
bd234.pdf

BD234-6
BD234-6

BD234SILICON PNP TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE PNP TRANSISTOR DESCRIPTION The BD234 is a silicon epitaxial-base PNP powertransistor in Jedec SOT-32 plastic packageinteded for use in medium power linear andswitching applications.123SOT-32INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitVCBO Collector-Base Voltage (IE = 0) -

 9.2. Size:37K  fairchild semi
bd234 bd236 bd238.pdf

BD234-6
BD234-6

BD234/236/238Medium Power Linear and Switching Applications Complement to BD 233/235/237 respectivelyTO-12611. Emitter 2.Collector 3.BasePNP Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage: BD234 - 45 V: BD236 - 60 V: BD238 - 100 V VCEO Collector-Emitter Voltage: BD234 -

 9.3. Size:43K  samsung
bd234 bd236 bd238.pdf

BD234-6
BD234-6

BD234/236/238 PNP EPITAXIAL SILICON TRANSISTORMEDIUM POWER LINEAR ANDTO-126SWITCHING APPLICATIONS Complement to BD 233/235/237 respectivelyABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector Base Voltage : BD234 VCBO - 45 V: BD236 - 60 V: BD238 - 100 V Collector Emitter Voltage : BD234 VCEO - 45 V1. Emitter 2.Collector 3.Base: BD236 - 60 V: BD238 - 8

 9.4. Size:144K  onsemi
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BD234-6
BD234-6

BD237G (NPN),BD234G, BD238G (PNP)Plastic Medium PowerBipolar TransistorsDesigned for use in 5.0 to 10 W audio amplifiers and driversutilizing complementary or quasi complementary circuits.http://onsemi.comFeatures2.0 AMPERES High DC Current GainPOWER TRANSISTORS Epoxy Meets UL 94 V0 @ 0.125 in25 WATTS These Devices are Pb-Free and are RoHS Compliant*PNP NPN

 9.5. Size:63K  onsemi
bd237 bd234 bd238.pdf

BD234-6
BD234-6

BD237 (NPN), BD234 (PNP),BD238 (PNP)Preferred DevicesPlastic Medium PowerBipolar TransistorsDesigned for use in 5.0 to 10 W audio amplifiers and driversutilizing complementary or quasi complementary circuits.http://onsemi.comFeatures2.0 AMPERES DC Current Gain -POWER TRANSISTORShFE = 40 (Min) @ IC = 0.15 Adc25 WATTS Epoxy Meets UL 94 V0 @ 0.125 in ESD Rati

 9.6. Size:486K  cdil
bd233 bd234 bd235 bd236 bd237 bd238.pdf

BD234-6
BD234-6

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyEPITAXIAL SILICON POWER TRANSISTORS BD233 BD234BD235 BD236BD237 BD238NPN PNPTO126 Plastic PackageECBIntended for use in Medium Power Linear Switching ApplicationsABSOLUTE MAXIMUM RATINGSBD233 BD235 BD237DESCRIPTION SYMBOL UNITBD234 BD236 BD238Collector Base Voltage VCBO 45 60

 9.7. Size:648K  jiangsu
bd234 bd236 bd238.pdf

BD234-6
BD234-6

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors BD234/236/238 TRANSISTOR (PNP) TO-126 FEATURES Power Dissipation 1. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit2. COLLECTOR Collector-Base Voltage BD234 -45 VCBO V BD236 -60 3. BASE BD238 -100 Collector-Emitter Voltage BD234 -45 VC

 9.8. Size:165K  lge
bd234 bd236 bd238.pdf

BD234-6
BD234-6

BD234/236/238(PNP)TO-126 TransistorTO-1261. EMITTER 2. COLLECTOR 3. BASE 3 22.500 7.4001 2.9001.1007.8001.500Features3.9003.0004.100 Power dissipation 3.20010.6000.000MAXIMUM RATINGS (TA=25 unless otherwise noted) 11.0000.300Symbol Parameter Value UnitsCollector-Base Voltage BD234 -45 VCBO V 2.100BD236 -60 2.300BD238 -100

 9.9. Size:118K  shantou-huashan
hsbd234.pdf

BD234-6

PNP S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HSBD234 APPLICATIONS Medium Power Linear switching Applications ABSOLUTE MAXIMUM RATINGSTa=25 TstgStorage Temperature -55~150TjJunction Temperature 150PCCollector DissipationTc=25

 9.10. Size:188K  inchange semiconductor
bd234 bd236 bd238.pdf

BD234-6
BD234-6

INCHANGE Semiconductorisc Silicon PNP Power Transistor BD234/236/238DESCRIPTIONDC Current Gain-: h = 40(Min)@ I = -0.15AFE CComplement to Type BD233/235/237Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in 5~10 watt audio amplifiers and driversutilizing complementary or quasi complementary circuits.AB

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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