BD236-16 Datasheet. Equivalente

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BD235/BD236 BD237/BD238 COMPLEMENTARY SILICON POWER TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BD235 and BD237 are silicon epitaxial-base NPN power transistors in Jedec SOT-32 plastic package inteded for use in medium power linear and switching applications. The complementary PNP types are BD236 and BD238 respectively. 1 2 3 SOT-32 INTERNAL SCHEMATIC DIAGRAM A

 9.2. Size:37K  fairchild semi
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BD234/236/238 Medium Power Linear and Switching Applications Complement to BD 233/235/237 respectively TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage BD234 - 45 V BD236 - 60 V BD238 - 100 V VCEO Collector-Emitter Voltage BD234 -

 9.3. Size:43K  samsung
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BD234/236/238 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND TO-126 SWITCHING APPLICATIONS Complement to BD 233/235/237 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector Base Voltage BD234 VCBO - 45 V BD236 - 60 V BD238 - 100 V Collector Emitter Voltage BD234 VCEO - 45 V 1. Emitter 2.Collector 3.Base BD236 - 60 V BD238 - 8

 9.4. Size:486K  cdil
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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company EPITAXIAL SILICON POWER TRANSISTORS BD233 BD234 BD235 BD236 BD237 BD238 NPN PNP TO126 Plastic Package E C B Intended for use in Medium Power Linear Switching Applications ABSOLUTE MAXIMUM RATINGS BD233 BD235 BD237 DESCRIPTION SYMBOL UNIT BD234 BD236 BD238 Collector Base Voltage VCBO 45 60

 9.5. Size:648K  jiangsu
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors BD234/236/238 TRANSISTOR (PNP) TO-126 FEATURES Power Dissipation 1. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 2. COLLECTOR Collector-Base Voltage BD234 -45 VCBO V BD236 -60 3. BASE BD238 -100 Collector-Emitter Voltage BD234 -45 VC

 9.6. Size:165K  lge
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BD234/236/238(PNP) TO-126 Transistor TO-126 1. EMITTER 2. COLLECTOR 3. BASE 3 2 2.500 7.400 1 2.900 1.100 7.800 1.500 Features 3.900 3.000 4.100 Power dissipation 3.200 10.600 0.000 MAXIMUM RATINGS (TA=25 unless otherwise noted) 11.000 0.300 Symbol Parameter Value Units Collector-Base Voltage BD234 -45 VCBO V 2.100 BD236 -60 2.300 BD238 -100

 9.7. Size:118K  shantou-huashan
 hsbd236.pdf

PNP S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HSBD236 APPLICATIONS Medium Power Linear switching Applications ABSOLUTE MAXIMUM RATINGS Ta=25 Tstg Storage Temperature -55 150 Tj Junction Temperature 150 PC Collector Dissipation Tc=25

 9.8. Size:188K  inchange semiconductor
 bd234 bd236 bd238.pdf

INCHANGE Semiconductor isc Silicon PNP Power Transistor BD234/236/238 DESCRIPTION DC Current Gain- h = 40(Min)@ I = -0.15A FE C Complement to Type BD233/235/237 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in 5 10 watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits. AB