BD236G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

BD235/BD236BD237/BD238COMPLEMENTARY SILICON POWER TRANSISTORS SGS-THOMSON PREFERRED SALESTYPESDESCRIPTIONThe BD235 and BD237 are silicon epitaxial-baseNPN power transistors in Jedec SOT-32 plasticpackage inteded for use in medium power linearand switching applications.The complementary PNP types are BD236 andBD238 respectively.123SOT-32INTERNAL SCHEMATIC DIAGRAMA

BD234/236/238Medium Power Linear and Switching Applications Complement to BD 233/235/237 respectivelyTO-12611. Emitter 2.Collector 3.BasePNP Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage: BD234 - 45 V: BD236 - 60 V: BD238 - 100 V VCEO Collector-Emitter Voltage: BD234 -

BD234/236/238 PNP EPITAXIAL SILICON TRANSISTORMEDIUM POWER LINEAR ANDTO-126SWITCHING APPLICATIONS Complement to BD 233/235/237 respectivelyABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector Base Voltage : BD234 VCBO - 45 V: BD236 - 60 V: BD238 - 100 V Collector Emitter Voltage : BD234 VCEO - 45 V1. Emitter 2.Collector 3.Base: BD236 - 60 V: BD238 - 8

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyEPITAXIAL SILICON POWER TRANSISTORS BD233 BD234BD235 BD236BD237 BD238NPN PNPTO126 Plastic PackageECBIntended for use in Medium Power Linear Switching ApplicationsABSOLUTE MAXIMUM RATINGSBD233 BD235 BD237DESCRIPTION SYMBOL UNITBD234 BD236 BD238Collector Base Voltage VCBO 45 60

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors BD234/236/238 TRANSISTOR (PNP) TO-126 FEATURES Power Dissipation 1. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit2. COLLECTOR Collector-Base Voltage BD234 -45 VCBO V BD236 -60 3. BASE BD238 -100 Collector-Emitter Voltage BD234 -45 VC

BD234/236/238(PNP)TO-126 TransistorTO-1261. EMITTER 2. COLLECTOR 3. BASE 3 22.500 7.4001 2.9001.1007.8001.500Features3.9003.0004.100 Power dissipation 3.20010.6000.000MAXIMUM RATINGS (TA=25 unless otherwise noted) 11.0000.300Symbol Parameter Value UnitsCollector-Base Voltage BD234 -45 VCBO V 2.100BD236 -60 2.300BD238 -100

PNP S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HSBD236 APPLICATIONS Medium Power Linear switching Applications ABSOLUTE MAXIMUM RATINGSTa=25 TstgStorage Temperature -55~150TjJunction Temperature 150PCCollector DissipationTc=25

INCHANGE Semiconductorisc Silicon PNP Power Transistor BD234/236/238DESCRIPTIONDC Current Gain-: h = 40(Min)@ I = -0.15AFE CComplement to Type BD233/235/237Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in 5~10 watt audio amplifiers and driversutilizing complementary or quasi complementary circuits.AB