2N2854-2
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N2854-2
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.85
W
Tensión colector-base (Vcb): 60
V
Tensión colector-emisor (Vce): 40
V
Corriente del colector DC máxima (Ic): 3
A
Temperatura operativa máxima (Tj): 200
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 30
MHz
Capacitancia de salida (Cc): 125
pF
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta: MT27
Búsqueda de reemplazo de transistor bipolar 2N2854-2
2N2854-2
Datasheet (PDF)
9.2. Size:62K central
2n2857 2n3839.pdf 
145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824
9.3. Size:197K semelab
2n2857c1b.pdf
SILICON RF SMALL SIGNAL NPN TRANSISTOR 2N2857C1 High Current Gain-Bandwidth Product (fT) Hermetic Ceramic Surface Mount Package Designed For High Gain, Low Noise Amplifier, Oscillator and Mixer Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO Collector Base Voltage 30V VCEO Collector Emitt
9.4. Size:196K semelab
2n2857c1.pdf
SILICON RF SMALL SIGNAL NPN TRANSISTOR 2N2857C1 High Current Gain-Bandwidth Product (fT) Hermetic Ceramic Surface Mount Package Designed For High Gain, Low Noise Amplifier, Oscillator and Mixer Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO Collector Base Voltage 30V VCEO Collector Emitt
9.5. Size:197K semelab
2n2857c1a.pdf
SILICON RF SMALL SIGNAL NPN TRANSISTOR 2N2857C1 High Current Gain-Bandwidth Product (fT) Hermetic Ceramic Surface Mount Package Designed For High Gain, Low Noise Amplifier, Oscillator and Mixer Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO Collector Base Voltage 30V VCEO Collector Emitt
9.6. Size:13K semelab
2n2857.pdf
2N2857MECHANICAL DATADimensions in mm (inches)NPN TRANSISTOR4.95 (0.195)4.52 (0.178)4.95 (0.195)4.52 (0.178)FEATURES SILICON NPN TRANSISTOR0.48 (0.019)APPLICATIONS:0.41 (0.016)dia. AMPLIFIER, OSCILLATOR ANDCONVERTER APPLICATIONS UP TO500MHz2.54 (0.100)Nom.43 12TO-72 METAL PACKAGEABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated)VC
9.7. Size:10K semelab
2n2857dcsm.pdf
2N2857DCSMDimensions in mm (inches). Dual Bipolar NPN Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 0.152.29 0.20 1.65 0.13(0.055 0.006)(0.09 0.008) (0.065 0.005)Applications 2 314Dual Bipolar NPN Devices. A0.236 5rad. (0.009) V = 30V CEO6.22 0.13 A = 1.27 0.13I = 0.04A C(0.
Otros transistores... 2N2852-2
, 2N2852-3
, 2N2853
, 2N2853-1
, 2N2853-2
, 2N2853-3
, 2N2854
, 2N2854-1
, BC639
, 2N2854-3
, 2N2855
, 2N2855-1
, 2N2855-2
, 2N2855-3
, 2N2856
, 2N2856-1
, 2N2856-2
.
