2N2854-2 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N2854-2

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.85 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 40 V

Corriente del colector DC máxima (Ic): 3 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 30 MHz

Capacitancia de salida (Cc): 125 pF

Ganancia de corriente contínua (hFE): 100

Encapsulados: MT27

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2N2854-2 datasheet

 9.1. Size:433K  rca
2n2857.pdf pdf_icon

2N2854-2

 9.2. Size:62K  central
2n2857 2n3839.pdf pdf_icon

2N2854-2

145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824

 9.3. Size:197K  semelab
2n2857c1b.pdf pdf_icon

2N2854-2

SILICON RF SMALL SIGNAL NPN TRANSISTOR 2N2857C1 High Current Gain-Bandwidth Product (fT) Hermetic Ceramic Surface Mount Package Designed For High Gain, Low Noise Amplifier, Oscillator and Mixer Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise stated) VCBO Collector Base Voltage 30V VCEO Collector Emitt

 9.4. Size:196K  semelab
2n2857c1.pdf pdf_icon

2N2854-2

SILICON RF SMALL SIGNAL NPN TRANSISTOR 2N2857C1 High Current Gain-Bandwidth Product (fT) Hermetic Ceramic Surface Mount Package Designed For High Gain, Low Noise Amplifier, Oscillator and Mixer Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise stated) VCBO Collector Base Voltage 30V VCEO Collector Emitt

Otros transistores... 2N2852-2, 2N2852-3, 2N2853, 2N2853-1, 2N2853-2, 2N2853-3, 2N2854, 2N2854-1, 431, 2N2854-3, 2N2855, 2N2855-1, 2N2855-2, 2N2855-3, 2N2856, 2N2856-1, 2N2856-2