BD237G Todos los transistores

 

BD237G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BD237G

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 30 W

Tensión colector-base (Vcb): 100 V

Tensión colector-emisor (Vce): 100 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 4 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 50 MHz

Ganancia de corriente contínua (hfe): 40

Empaquetado / Estuche: TO126

Búsqueda de reemplazo de transistor bipolar BD237G

 

BD237G Datasheet (PDF)

9.1. bd237rev.pdf Size:104K _motorola

BD237G
BD237G

Order this documentMOTOROLAby BD237/DSEMICONDUCTOR TECHNICAL DATABD237Plastic Medium Power SiliconNPN Transistor2.0 AMPERES. . . designed for use in 5.0 to 10 Watt audio amplifiers an

9.2. bd235 bd236 bd237 bd238.pdf Size:75K _st

BD237G
BD237G

BD235/BD236BD237/BD238COMPLEMENTARY SILICON POWER TRANSISTORS SGS-THOMSON PREFERRED SALESTYPESDESCRIPTIONThe BD235 and BD237 are silicon epitaxial-baseNPN power transistors in Jedec SOT-32 plasticpackage inteded for use in medium power linearand switching applications.The complementary PNP types are BD236 andBD238 respectively.123SOT-32INTERNAL SCHEMATIC DIAGRAMA

 9.3. bd235 bd237.pdf Size:226K _st

BD237G
BD237G

BD235BD237Low voltage NPN power transistorsFeatures Low saturation voltage NPN transistorsApplications1 Audio, power linear and switching applications23SOT-32Description(TO-126)The devices are manufactured in Planar technology with Base Island layout. The Figure 1. Internal schematic diagramresulting transistor shows exceptional high gain perfo

9.4. bd233 bd235 bd237.pdf Size:38K _fairchild_semi

BD237G
BD237G

BD233/235/237Medium Power Linear and Switching Applications Complement to BD 234/236/238 respectivelyTO-12611. Emitter 2.Collector 3.BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage : BD233 45 V : BD235 60 V : BD237 100 V VCEO Collector-Emitter Voltage : BD233 45 V

 9.5. bd237 bd234 bd238.pdf Size:63K _onsemi

BD237G
BD237G

BD237 (NPN), BD234 (PNP),BD238 (PNP)Preferred DevicesPlastic Medium PowerBipolar TransistorsDesigned for use in 5.0 to 10 W audio amplifiers and driversutilizing complementary or quasi complementary circuits.http://onsemi.comFeatures2.0 AMPERES DC Current Gain -POWER TRANSISTORShFE = 40 (Min) @ IC = 0.15 Adc25 WATTS Epoxy Meets UL 94 V0 @ 0.125 in ESD Rati

9.6. bd237.pdf Size:107K _utc

BD237G
BD237G

UNISONIC TECHNOLOGIES CO., LTD BD237 NPN EPITAXIAL SILICON TRANSISTOR 80V, NPN TRANSISTORS DESCRIPTION The UTC BD237 is an NPN transistor. it uses UTCs advanced technology to provide customers with high collector-emitterbreakdown voltage, etc. FEATURES * Complement to UTC BD238 respectively * High collector-emitter breakdown voltage ORDERING INFORMATION Orde

9.7. bd233 bd234 bd235 bd236 bd237 bd238.pdf Size:486K _cdil

BD237G
BD237G

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyEPITAXIAL SILICON POWER TRANSISTORS BD233 BD234BD235 BD236BD237 BD238NPN PNPTO126 Plastic PackageECBIntended for use in Medium Power Linear Switching ApplicationsABSOLUTE MAXIMUM RATINGSBD233 BD235 BD237DESCRIPTION SYMBOL UNITBD234 BD236 BD238Collector Base Voltage VCBO 45 60

9.8. bd237s.pdf Size:73K _cdil

BD237G
BD237G

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN EPITAXIAL SILICON POWER TRANSISTOR BD237-STO126 Plastic PackageECBIntended for use in Medium Power Linear Switching ApplicationsABSOLUTE MAXIMUM RATINGS (Ta=25C)DESCRIPTION SYMBOL VALUE UNITCollector Base Voltage VCBO 120 VCollector Emitter Voltage VCEO 95 VEmitter Base Volta

9.9. bd233 bd235 bd237.pdf Size:222K _lge

BD237G
BD237G

BD233/235/237(NPN)TO-126 TransistorTO-1261. EMITTER 2. COLLECTOR 3. BASE 3 21 Features2.5007.4002.9001.1007.800 Complement to BD 234/236/238 respectively 1.5003.9003.0004.100MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.20010.600Symbol Parameter Value Units0.00011.0000.300Collector-Base Voltage BD233 45 VCBO V BD235 60 BD237

9.10. bd233 bd235 bd237.pdf Size:181K _wietron

BD237G
BD237G

BD233/235/237NPN Epitaxial Planar Transistors1. EMITTER2. COLLECTORP b Lead(Pb)-Free3. BASE123TO-126ABSOLUTE MAXIMUM RATINGS(TA=25C)Rating Symbol BD233 BD235 BD237 UnitVCBO45 60 100 VCollector-Emitter VoltageVCEO45 60 80 VCollector-Base VoltageVEBOEmitter-Base Voltage 5.0 5.0 5.0 VCollector Current IC2.0 APD1.25 WPower DisspationTj150 CJ

9.11. hsbd237.pdf Size:119K _shantou-huashan

BD237G

NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HSBD237 APPLICATIONS Medium Power Linear switching Applications ABSOLUTE MAXIMUM RATINGSTa=25 TstgStorage Temperature -55~150TjJunction Temperature 150PCCollector DissipationTc=25

9.12. bd233 bd235 bd237.pdf Size:188K _inchange_semiconductor

BD237G
BD237G

INCHANGE Semiconductorisc Silicon NPN Power Transistor BD233/235/237DESCRIPTIONDC Current Gain-: h = 40(Min)@ I = 0.15AFE CComplement to Type BD234/236/238Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in 5~10 watt audio amplifiers and driversutilizing complementary or quasi complementary circuits.ABS

9.13. bd237.pdf Size:206K _inchange_semiconductor

BD237G
BD237G

isc Silicon NPN Power Transistor BD237DESCRIPTIONDC Current Gain-: h = 40(Min)@ I = 0.15AFE CCollector-Emitter Sustaining Voltage -: V = 80V(Min)CEO(SUS)Complement to Type BD238Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in 5~10 watt audio amplifiers and driversutilizing complementary or quasi

Otros transistores... 2SC619 , 2SC62 , 2SC620 , 2SC620M , 2SC621 , 2SC621A , 2SC621M , 2SC622 , 2N5401 , 2SC623 , 2SC624 , 2SC626 , 2SC627 , 2SC627F , 2SC628 , 2SC629 , 2SC63 .

 

 
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