BD239C . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BD239C
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 30 W
Tensión colector-base (Vcb): 115 V
Tensión colector-emisor (Vce): 100 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 2 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 3 MHz
Ganancia de corriente contínua (hfe): 15
Paquete / Cubierta: TO220
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BD239C Datasheet (PDF)
bd239c bd240c.pdf

BD239CBD240CCOMPLEMENTARY SILICON POWER TRANSISTORS BD239C IS ST PREFERRED SALESTYPEDESCRIPTION The BD239C is a silicon epitaxial-base NPNtransistor mounted in Jedec TO-220 plasticpackage.It is inteded for use in medium power linear andswitching applications.3The PNP complementary type is BD240C.21TO-220INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymb
bd239 bd239a bd239b bd239c.pdf

BD239/A/B/CMedium Power Linear and Switching Applications Complement to BD240/A/B/C respectivelyTO-22011.Base 2.Collector 3.EmitterNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCEO Collector-Emitter Voltage: BD239 45 V: BD239A 60 V: BD239B 80 V: BD239C 100 V VCER Collector-Emitter Voltage:
bd239 bd239a bd239b bd239c.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
bd239 bd239a bd239b bd239c.pdf

isc Silicon NPN Power Transistor BD239/A/B/CDESCRIPTIONDC Current Gain -h = 40(Min)@ I = 0.2AFE CCollector-Emitter Sustaining Voltage-: V = 45V(Min)- BD239; 60V(Min)- BD239ACEO(SUS)80V(Min)- BD239B; 100V(Min)- BD239CComplement to Type BD240/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for medium powe
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: BD543D | 2SC5609



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