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BD239C . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BD239C
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 30 W
   Tensión colector-base (Vcb): 115 V
   Tensión colector-emisor (Vce): 100 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 2 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 3 MHz
   Ganancia de corriente contínua (hfe): 15
   Paquete / Cubierta: TO220
     - Selección de transistores por parámetros

 

BD239C Datasheet (PDF)

 ..1. Size:79K  st
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BD239C

BD239CBD240CCOMPLEMENTARY SILICON POWER TRANSISTORS BD239C IS ST PREFERRED SALESTYPEDESCRIPTION The BD239C is a silicon epitaxial-base NPNtransistor mounted in Jedec TO-220 plasticpackage.It is inteded for use in medium power linear andswitching applications.3The PNP complementary type is BD240C.21TO-220INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymb

 ..2. Size:27K  fairchild semi
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BD239C

BD239/A/B/CMedium Power Linear and Switching Applications Complement to BD240/A/B/C respectivelyTO-22011.Base 2.Collector 3.EmitterNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCEO Collector-Emitter Voltage: BD239 45 V: BD239A 60 V: BD239B 80 V: BD239C 100 V VCER Collector-Emitter Voltage:

 ..3. Size:146K  onsemi
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BD239C

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 ..4. Size:212K  inchange semiconductor
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BD239C

isc Silicon NPN Power Transistor BD239/A/B/CDESCRIPTIONDC Current Gain -h = 40(Min)@ I = 0.2AFE CCollector-Emitter Sustaining Voltage-: V = 45V(Min)- BD239; 60V(Min)- BD239ACEO(SUS)80V(Min)- BD239B; 100V(Min)- BD239CComplement to Type BD240/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for medium powe

Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: BD543D | 2SC5609

 

 
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