BD241B . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Order this documentMOTOROLAby BD241B/DSEMICONDUCTOR TECHNICAL DATANPNBD241BComplementary Silicon PlasticBD241C*Power TransistorsPNP. . . designed for use in general purpose amplifier and switching applications.BD242B CollectorEmitter Saturation Voltage VCE = 1.2 Vdc (Max) @ IC = 3.0 AdcBD242C* CollectorEmitter Sustaining Voltage VCEO(sus) = 80 V

BD241/A/B/CMedium Power Linear and Switching Applications Complement to BD242/A/B/C respectivelyTO-22011.Base 2.Collector 3.EmitterNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCEO Collector-Emitter Voltage: BD241 45 V: BD241A 60 V: BD241B 80 V: BD241C 100 V VCER Collector-Emitter Voltage:

isc Silicon NPN Power Transistor BD241/A/B/CDESCRIPTIONDC Current Gain -h = 25(Min)@ I = 1.0AFE CCollector-Emitter Sustaining Voltage-: V = 45V(Min)- BD241; 60V(Min)- BD241ACEO(SUS)80V(Min)- BD241B; 100V(Min)- BD241CComplement to Type BD242/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in gene

BD241BFPBD242BFPCOMPLEMENTARY SILICON POWER TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES FULLY MOLDED ISOLATED PACKAGE 2000 V DC ISOLATION (U.L. COMPLIANT)APPLICATIONS GENERAL PURPOSE SWITCHING GENERAL PURPOSE AMPLIFIERS3DESCRIPTION 21The BD241BFP is silicon epitaxial-base NPNtransistors mounted in TO-220FP fully moldedTO-220FPisol

Order this documentMOTOROLAby BD241C/DSEMICONDUCTOR TECHNICAL DATANPNBD241C*Complementary Silicon Plastic PNPBD242BPower Transistors. . . designed for use in general purpose amplifier and switching applications.BD242C* CollectorEmitter Saturation Voltage VCE = 1.2 Vdc (Max) @ IC = 3.0 Adc*Motorola Preferred Device CollectorEmitter Sustaining Voltage

BD241A-ANPN power transistor.Features This device is qualified for automotive application NPN transistorApplications3 Audio, general purpose switching and amplifier 21transistorsTO-220DescriptionThe devices are manufactured in Planar Figure 1. Internal schematic diagramtechnology with Base Island layout. The resulting transistor shows exception

BD241ABD241CNPN power transistors.Features NPN transistorsApplications Audio, general purpose switching and amplifier transistors321DescriptionTO-220The devices are manufactured in Planar technology with Base Island layout. The resulting transistor shows exceptional high gain Figure 1. Internal schematic diagramperformance coupled with very low sa

BD241CFPCOMPLEMENTARY SILICON POWER TRANSISTOR FULLY MOLDED ISOLATED PACKAGE 2000 V DC ISOLATION (U.L. COMPLIANT)APPLICATIONS GENERAL PURPOSE SWITCHING GENERAL PURPOSE AMPLIFIERSDESCRIPTIONThe BD241CFP is silicon epitaxial-base NPN3transistor mounted in TO-220FP fully molded 21isolated package.It is inteded for power linear and switchingTO-220FPapplications.INTER

BD241A/B/CBD242A/B/CCOMPLEMENTARY SILICON POWER TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The BD241A, BD241B and BD241C are siliconepitaxial-base NPN transistors mounted in JedecTO-220 plastic package.They are inteded for use in medium power linearand switching applications.32The complementary PNP types are BD242A,1BD2

BD241C (NPN),BD242B (PNP),BD242C (PNP)Complementary SiliconPlastic Power Transistorshttp://onsemi.comDesigned for use in general purpose amplifier and switchingapplications.POWER TRANSISTORSFeaturesCOMPLEMENTARY Collector-Emitter Saturation Voltage -SILICONVCE = 1.2 Vdc (Max) @ IC = 3.0 Adc3 AMP Collector-Emitter Sustaining Voltage -80-100 VOLTSVCEO(sus)

BD241C (NPN),BD242B (PNP),BD242C (PNP)Complementary SiliconPlastic Power Transistorswww.onsemi.comDesigned for use in general purpose amplifier and switchingapplications.POWER TRANSISTORSFeaturesCOMPLEMENTARY High Current Gain - Bandwidth ProductSILICON Compact TO-220 AB Package3 AMP Epoxy Meets UL94 V-0 @ 0.125 in80-100 VOLTS These Devices are Pb-F

BD241, BD241A, BD241B, BD241CNPN SILICON POWER TRANSISTORSCopyright 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997 Designed for Complementary Use with the BD242 SeriesTO-220 PACKAGE(TOP VIEW) 40 W at 25C Case Temperature 3 A Continuous Collector CurrentB 1C 2 5 A Peak Collector CurrentE 3 Customer-Specified Selections AvailablePin 2 is in ele

NPN SILICON TRANSISTOR Shantou Huashan Electronic Devices Co.,Ltd. HBD241C APPLICATIONS Medium Power Linear And Switching Applicatione. ABSOLUTE MAXIMUM RATINGSTa=25 TO-220 TstgStorage Temperature -65~150TjJunction Temperature 150PCCollector DissipationTc=25

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD241/A/B/C DESCRIPTION With TO-220C package Complement to type BD242/A/B/C APPLICATIONS For medium power linear and switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS