BD242A Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BD242A
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 40 W
Tensión colector-base (Vcb): 70 V
Tensión colector-emisor (Vce): 60 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 3 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 3 MHz
Ganancia de corriente contínua (hFE): 25
Encapsulados: TO220
Búsqueda de reemplazo de BD242A
- Selecciónⓘ de transistores por parámetros
BD242A datasheet
bd242 bd242a bd242b bd242c.pdf
INCHANGE Semiconductor isc Silicon PNP Power Transistor BD242/A/B/C DESCRIPTION DC Current Gain -h = 25(Min)@ I = -1.0A FE C Collector-Emitter Sustaining Voltage- V = -45V(Min)- BD242; -60V(Min)- BD242A CEO(SUS) -80V(Min)- BD242B; -100V(Min)- BD242C Complement to Type BD241/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATION
bd241b bd241c bd242b bd242c.pdf
Order this document MOTOROLA by BD241B/D SEMICONDUCTOR TECHNICAL DATA NPN BD241B Complementary Silicon Plastic BD241C* Power Transistors PNP . . . designed for use in general purpose amplifier and switching applications. BD242B Collector Emitter Saturation Voltage VCE = 1.2 Vdc (Max) @ IC = 3.0 Adc BD242C* Collector Emitter Sustaining Voltage VCEO(sus) = 80 V
bd241 bd242.pdf
BD241A/B/C BD242A/B/C COMPLEMENTARY SILICON POWER TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The BD241A, BD241B and BD241C are silicon epitaxial-base NPN transistors mounted in Jedec TO-220 plastic package. They are inteded for use in medium power linear and switching applications. 3 2 The complementary PNP types are BD242A, 1 BD2
Otros transistores... BD241, BD241A, BD241B, BD241C, BD241D, BD241E, BD241F, BD242, TIP31C, BD242B, BD242C, BD242D, BD242E, BD242F, BD243, BD243A, BD243B
History: BD242D | 2N6011 | KN4402
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
oc70 transistor | p0603bd mosfet | p157r5nt | ptp03n04n | sm4377 mosfet datasheet | tip31c reemplazo | 2sa906 | c2389 transistor









