BD243 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

BD243/A/B/CMedium Power Linear and Switching Applications Complement to BD244, BD244A, BD244B and BD244C respectivelyTO-22011.Base 2.Collector 3.EmitterNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage: BD243 45 V: BD243A 60 V: BD243B 80 V: BD243C 100 V VCEO Collector-

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyTO-220 Plastic Package BD243, BD243A, BD243B, BD243CBD244, BD244A, BD244B, BD244CBD243, 243A, 243B, 243C NPN PLASTIC POWER TRANSISTORSBD244, 244A, 244B, 244C PNP PLASTIC POWER TRANSISTORSGeneral Purpose Amplifier and Switching ApplicationsPIN CONFIGURATION41. BASE2. COLLECTOR3. EMITTER

BD243, BD243A, BD243B, BD243CNPN SILICON POWER TRANSISTORSCopyright 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997 Designed for Complementary Use with the BD244 SeriesTO-220 PACKAGE(TOP VIEW) 65 W at 25C Case Temperature 6 A Continuous Collector CurrentB 1C 2 10 A Peak Collector CurrentE 3 Customer-Specified Selections AvailablePin 2 is in el

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BD243/A/B/C DESCRIPTION DC Current Gain -hFE =30(Min)@ IC= 0.3A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 45V(Min)- BD243; 60V(Min)- BD243A 80V(Min)- BD243B; 100V(Min)- BD243C Complement to Type BD244/A/B/C APPLICATIONS Designed for use in general purpose power amplifier and

isc Silicon NPN Power Transistor BD243/A/B/CDESCRIPTIONDC Current Gain -h =30(Min)@ I = 0.3AFE CCollector-Emitter Sustaining Voltage-: V = 45V(Min)- BD243; 60V(Min)- BD243ACEO(SUS)80V(Min)- BD243B; 100V(Min)- BD243CComplement to Type BD244/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in gener

Order this documentMOTOROLAby BD243B/DSEMICONDUCTOR TECHNICAL DATANPNBD243BComplementary Silicon PlasticBD243C*Power TransistorsPNP. . . designed for use in general purpose amplifier and switching applications.BD244B Collector Emitter Saturation Voltage VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc Collector Emitter Sustaining Voltage BD244C*VCEO(sus) =

BD243CBD244CComplementary power transistors .Features Complementary NPN-PNP devicesApplications Power linear and switching321DescriptionTO-220The device is manufactured in Planar technology with Base Island layout. The resulting transistor shows exceptional high gain performance Figure 1. Internal schematic diagramcoupled with very low saturation vo

BD243B, BD243C (NPN)BD244B, BD244C (PNP)Complementary SiliconPlastic Power TransistorsThese devices are designed for use in general purpose amplifier andswitching applications. http://onsemi.comFeatures6 AMPERE Collector - Emitter Saturation Voltage -POWER TRANSISTORSVCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 AdcCOMPLEMENTARY SILICON Collector Emitter Sustaining Voltage -

BD243B, BD243C (NPN),BD244B, BD244C (PNP)Complementary SiliconPlastic Power TransistorsThese devices are designed for use in general purpose amplifier andswitching applications. www.onsemi.comFeatures6 AMPERE High Current Gain Bandwidth ProductPOWER TRANSISTORS These Devices are Pb-Free and are RoHS Compliant*COMPLEMENTARY SILICON80-100 VOLTSMAXIMUM RATINGS65 W