BD243A Datasheet. Equivalente

 ..1. Size:38K  fairchild semi
 bd243 bd243a bd243b bd243c.pdf

BD243/A/B/C Medium Power Linear and Switching Applications Complement to BD244, BD244A, BD244B and BD244C respectively TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage BD243 45 V BD243A 60 V BD243B 80 V BD243C 100 V VCEO Collector-

 ..2. Size:212K  inchange semiconductor
 bd243 bd243a bd243b bd243c.pdf

isc Silicon NPN Power Transistor BD243/A/B/C DESCRIPTION DC Current Gain -h =30(Min)@ I = 0.3A FE C Collector-Emitter Sustaining Voltage- V = 45V(Min)- BD243; 60V(Min)- BD243A CEO(SUS) 80V(Min)- BD243B; 100V(Min)- BD243C Complement to Type BD244/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in gener

 9.1. Size:140K  motorola
 bd243b bd244b bd243c bd244c.pdf

Order this document MOTOROLA by BD243B/D SEMICONDUCTOR TECHNICAL DATA NPN BD243B Complementary Silicon Plastic BD243C* Power Transistors PNP . . . designed for use in general purpose amplifier and switching applications. BD244B Collector Emitter Saturation Voltage VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc Collector Emitter Sustaining Voltage BD244C* VCEO(sus) =

 9.2. Size:341K  st
 bd243c bd244c.pdf

BD243C BD244C Complementary power transistors . Features Complementary NPN-PNP devices Applications Power linear and switching 3 2 1 Description TO-220 The device is manufactured in Planar technology with Base Island layout. The resulting transistor shows exceptional high gain performance Figure 1. Internal schematic diagram coupled with very low saturation vo

 9.3. Size:137K  onsemi
 bd243cg.pdf

BD243B, BD243C (NPN) BD244B, BD244C (PNP) Complementary Silicon Plastic Power Transistors These devices are designed for use in general purpose amplifier and switching applications. http //onsemi.com Features 6 AMPERE Collector - Emitter Saturation Voltage - POWER TRANSISTORS VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc COMPLEMENTARY SILICON Collector Emitter Sustaining Voltage -

 9.4. Size:233K  onsemi
 bd243b bd243c bd244b bd244c.pdf

BD243B, BD243C (NPN), BD244B, BD244C (PNP) Complementary Silicon Plastic Power Transistors These devices are designed for use in general purpose amplifier and switching applications. www.onsemi.com Features 6 AMPERE High Current Gain Bandwidth Product POWER TRANSISTORS These Devices are Pb-Free and are RoHS Compliant* COMPLEMENTARY SILICON 80-100 VOLTS MAXIMUM RATINGS 65 W

 9.5. Size:71K  cdil
 bd243 a b c bd244.pdf

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package BD243, BD243A, BD243B, BD243C BD244, BD244A, BD244B, BD244C BD243, 243A, 243B, 243C NPN PLASTIC POWER TRANSISTORS BD244, 244A, 244B, 244C PNP PLASTIC POWER TRANSISTORS General Purpose Amplifier and Switching Applications PIN CONFIGURATION 4 1. BASE 2. COLLECTOR 3. EMITTER

 9.6. Size:86K  power-innovations
 bd243.pdf

BD243, BD243A, BD243B, BD243C NPN SILICON POWER TRANSISTORS Copyright 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997 Designed for Complementary Use with the BD244 Series TO-220 PACKAGE (TOP VIEW) 65 W at 25 C Case Temperature 6 A Continuous Collector Current B 1 C 2 10 A Peak Collector Current E 3 Customer-Specified Selections Available Pin 2 is in el

 9.7. Size:202K  inchange semiconductor
 bd243 a b c.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BD243/A/B/C DESCRIPTION DC Current Gain -hFE =30(Min)@ IC= 0.3A Collector-Emitter Sustaining Voltage- VCEO(SUS) = 45V(Min)- BD243; 60V(Min)- BD243A 80V(Min)- BD243B; 100V(Min)- BD243C Complement to Type BD244/A/B/C APPLICATIONS Designed for use in general purpose power amplifier and