BD244A Datasheet. Equivalente

 ..1. Size:38K  fairchild semi
 bd244 bd244a bd244b bd244c.pdf

BD244/A/B/C Medium Power Linear and Switching Applications Complement to BD243, BD243A, BD243B and BD243C respectively TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage BD244 - 45 V BD244A - 60 V BD244B - 80 V BD244C - 100 V VCEO Co

 ..2. Size:156K  onsemi
 bd244 bd244a bd244b bd244c.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 ..3. Size:212K  inchange semiconductor
 bd244 bd244a bd244b bd244c.pdf

isc Silicon PNP Power Transistor BD244/A/B/C DESCRIPTION DC Current Gain -h =30(Min)@ I = -0.3A FE C Collector-Emitter Sustaining Voltage- V = -45V(Min)- BD243; -60V(Min)- BD243A CEO(SUS) -80V(Min)- BD243B; -100V(Min)- BD243C Complement to Type BD243/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in

 9.1. Size:140K  motorola
 bd243b bd244b bd243c bd244c.pdf

Order this document MOTOROLA by BD243B/D SEMICONDUCTOR TECHNICAL DATA NPN BD243B Complementary Silicon Plastic BD243C* Power Transistors PNP . . . designed for use in general purpose amplifier and switching applications. BD244B Collector Emitter Saturation Voltage VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc Collector Emitter Sustaining Voltage BD244C* VCEO(sus) =

 9.2. Size:341K  st
 bd243c bd244c.pdf

BD243C BD244C Complementary power transistors . Features Complementary NPN-PNP devices Applications Power linear and switching 3 2 1 Description TO-220 The device is manufactured in Planar technology with Base Island layout. The resulting transistor shows exceptional high gain performance Figure 1. Internal schematic diagram coupled with very low saturation vo

 9.3. Size:233K  onsemi
 bd243b bd243c bd244b bd244c.pdf

BD243B, BD243C (NPN), BD244B, BD244C (PNP) Complementary Silicon Plastic Power Transistors These devices are designed for use in general purpose amplifier and switching applications. www.onsemi.com Features 6 AMPERE High Current Gain Bandwidth Product POWER TRANSISTORS These Devices are Pb-Free and are RoHS Compliant* COMPLEMENTARY SILICON 80-100 VOLTS MAXIMUM RATINGS 65 W

 9.4. Size:137K  onsemi
 bd244bg.pdf

BD243B, BD243C (NPN) BD244B, BD244C (PNP) Complementary Silicon Plastic Power Transistors These devices are designed for use in general purpose amplifier and switching applications. http //onsemi.com Features 6 AMPERE Collector - Emitter Saturation Voltage - POWER TRANSISTORS VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc COMPLEMENTARY SILICON Collector Emitter Sustaining Voltage -

 9.5. Size:137K  onsemi
 bd244cg.pdf

BD243B, BD243C (NPN) BD244B, BD244C (PNP) Complementary Silicon Plastic Power Transistors These devices are designed for use in general purpose amplifier and switching applications. http //onsemi.com Features 6 AMPERE Collector - Emitter Saturation Voltage - POWER TRANSISTORS VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc COMPLEMENTARY SILICON Collector Emitter Sustaining Voltage -

 9.6. Size:71K  cdil
 bd243 a b c bd244.pdf

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package BD243, BD243A, BD243B, BD243C BD244, BD244A, BD244B, BD244C BD243, 243A, 243B, 243C NPN PLASTIC POWER TRANSISTORS BD244, 244A, 244B, 244C PNP PLASTIC POWER TRANSISTORS General Purpose Amplifier and Switching Applications PIN CONFIGURATION 4 1. BASE 2. COLLECTOR 3. EMITTER

 9.7. Size:86K  power-innovations
 bd244.pdf

BD244, BD244A, BD244B, BD244C PNP SILICON POWER TRANSISTORS Copyright 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997 Designed for Complementary Use with the BD243 Series TO-220 PACKAGE (TOP VIEW) 65 W at 25 C Case Temperature 6 A Continuous Collector Current B 1 C 2 10 A Peak Collector Current E 3 Customer-Specified Selections Available Pin 2 is in el

 9.8. Size:204K  inchange semiconductor
 bd244b.pdf

isc Silicon PNP Power Transistor BD244B DESCRIPTION DC Current Gain -h =30(Min)@ I = -0.3A FE C Complement to Type BD243B 100% tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT

 9.9. Size:202K  inchange semiconductor
 bd244 a b c.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor BD244/A/B/C DESCRIPTION DC Current Gain -hFE =30(Min)@ IC= -0.3A Collector-Emitter Sustaining Voltage- VCEO(SUS) = -45V(Min)- BD243; -60V(Min)- BD243A -80V(Min)- BD243B; -100V(Min)- BD243C Complement to Type BD243/A/B/C APPLICATIONS Designed for use in general purpose power amplifier a

 9.10. Size:211K  inchange semiconductor
 bd244c.pdf

INCHANGE Semiconductor isc Silicon PNP Power Transistor BD244C DESCRIPTION DC Current Gain -h =30(Min)@ I = -0.3A FE C Complement to Type BD243C 100% tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB