BD245D Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BD245D

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 80 W

Tensión colector-base (Vcb): 160 V

Tensión colector-emisor (Vce): 120 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 15 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 3 MHz

Ganancia de corriente contínua (hFE): 15

Encapsulados: TO218

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BD245D datasheet

 ..1. Size:217K  inchange semiconductor
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BD245D

isc Silicon NPN Power Transistor BD245D DESCRIPTION Excellent Safe Operating Area DC Current Gain- h >40@I = 1A FE C Collector-Emitter Saturation Voltage- V )= 1 V(Max)@ I = 3A CE(sat C Designed for Complementary Use with the BD246D Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose switching

 9.1. Size:84K  bourns
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BD245D

BD245, BD245A, BD245B, BD245C NPN SILICON POWER TRANSISTORS Designed for Complementary Use with the SOT-93 PACKAGE (TOP VIEW) BD246 Series 80 W at 25 C Case Temperature B 1 10 A Continuous Collector Current C 2 15 A Peak Collector Current Customer-Specified Selections Available 3 E Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute max

 9.2. Size:91K  power-innovations
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BD245D

BD245, BD245A, BD245B, BD245C NPN SILICON POWER TRANSISTORS Copyright 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997 Designed for Complementary Use with the SOT-93 PACKAGE BD246 Series (TOP VIEW) 80 W at 25 C Case Temperature B 1 10 A Continuous Collector Current 15 A Peak Collector Current 2 C Customer-Specified Selections Available 3 E Pin 2 is in

 9.3. Size:203K  inchange semiconductor
bd245 a b c.pdf pdf_icon

BD245D

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BD245/A/B/C DESCRIPTION Collector Current -IC= 10A Collector-Emitter Breakdown Voltage- V(BR)CEO = 45V(Min)- BD245; 60V(Min)- BD245A 80V(Min)- BD245B; 100V(Min)- BD245C Complement to Type BD246/A/B/C APPLICATIONS Designed for use in general purpose power amplifier and switching appl

Otros transistores... BD244C, BD244D, BD244E, BD244F, BD245, BD245A, BD245B, BD245C, 2SD313, BD245E, BD245F, BD246, BD246A, BD246B, BD246C, BD246D, BD246E