BD246E . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BD246E
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 80 W
Tensión colector-base (Vcb): 180 V
Tensión colector-emisor (Vce): 140 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 15 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 3 MHz
Ganancia de corriente contínua (hfe): 15
Paquete / Cubierta: TO218
Búsqueda de reemplazo de BD246E
BD246E Datasheet (PDF)
bd246-a-b-c.pdf

BD246, BD246A, BD246B, BD246CPNP SILICON POWER TRANSISTORS Designed for Complementary Use with the SOT-93 PACKAGEBD245 Series (TOP VIEW) 80 W at 25C Case TemperatureB1 10 A Continuous Collector CurrentC 2 15 A Peak Collector Current Customer-Specified Selections Available3EPin 2 is in electrical contact with the mounting base.MDTRAAAabsolute maxi
bd246.pdf

BD246, BD246A, BD246B, BD246CPNP SILICON POWER TRANSISTORSCopyright 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997 Designed for Complementary Use with the SOT-93 PACKAGEBD245 Series(TOP VIEW) 80 W at 25C Case TemperatureB1 10 A Continuous Collector Current 15 A Peak Collector Current 2C Customer-Specified Selections Available3EPin 2 is in
bd246 bd246a bd246b bd246c.pdf

isc Silicon PNP Power Transistor BD246/A/B/CDESCRIPTIONCollector Current -I = -10ACCollector-Emitter Breakdown Voltage-: V = -45V(Min)- BD246; -60V(Min)- BD246A(BR)CEO-80V(Min)- BD246B; -100V(Min)- BD246CComplement to Type BD245/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose
bd246 a b c.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor BD246/A/B/C DESCRIPTION Collector Current -IC= -10A Collector-Emitter Breakdown Voltage- : V(BR)CEO = -45V(Min)- BD246; -60V(Min)- BD246A -80V(Min)- BD246B; -100V(Min)- BD246C Complement to Type BD245/A/B/C APPLICATIONS Designed for use in general purpose power amplifier and switching
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , BC546 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: SB2202 | 2SD1387 | ULB122 | 2SC3970A | 2SD1389 | 2N4929 | EMX1FHA
History: SB2202 | 2SD1387 | ULB122 | 2SC3970A | 2SD1389 | 2N4929 | EMX1FHA



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