BD246F
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BD246F
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 80
W
Tensión colector-base (Vcb): 200
V
Tensión colector-emisor (Vce): 160
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 15
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 3
MHz
Ganancia de corriente contínua (hfe): 15
Paquete / Cubierta:
TO218
Búsqueda de reemplazo de transistor bipolar BD246F
BD246F
Datasheet (PDF)
9.1. Size:85K bourns
bd246-a-b-c.pdf 
BD246, BD246A, BD246B, BD246CPNP SILICON POWER TRANSISTORS Designed for Complementary Use with the SOT-93 PACKAGEBD245 Series (TOP VIEW) 80 W at 25C Case TemperatureB1 10 A Continuous Collector CurrentC 2 15 A Peak Collector Current Customer-Specified Selections Available3EPin 2 is in electrical contact with the mounting base.MDTRAAAabsolute maxi
9.2. Size:91K power-innovations
bd246.pdf
BD246, BD246A, BD246B, BD246CPNP SILICON POWER TRANSISTORSCopyright 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997 Designed for Complementary Use with the SOT-93 PACKAGEBD245 Series(TOP VIEW) 80 W at 25C Case TemperatureB1 10 A Continuous Collector Current 15 A Peak Collector Current 2C Customer-Specified Selections Available3EPin 2 is in
9.3. Size:217K inchange semiconductor
bd246 bd246a bd246b bd246c.pdf
isc Silicon PNP Power Transistor BD246/A/B/CDESCRIPTIONCollector Current -I = -10ACCollector-Emitter Breakdown Voltage-: V = -45V(Min)- BD246; -60V(Min)- BD246A(BR)CEO-80V(Min)- BD246B; -100V(Min)- BD246CComplement to Type BD245/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose
9.4. Size:210K inchange semiconductor
bd246 a b c.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor BD246/A/B/C DESCRIPTION Collector Current -IC= -10A Collector-Emitter Breakdown Voltage- : V(BR)CEO = -45V(Min)- BD246; -60V(Min)- BD246A -80V(Min)- BD246B; -100V(Min)- BD246C Complement to Type BD245/A/B/C APPLICATIONS Designed for use in general purpose power amplifier and switching
Otros transistores... 2N3192
, 2N3193
, 2N3194
, 2N3195
, 2N3196
, 2N3197
, 2N3198
, 2N3199
, BC327
, 2N320
, 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
.
