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BD246F . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BD246F
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 80 W
   Tensión colector-base (Vcb): 200 V
   Tensión colector-emisor (Vce): 160 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 15 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 3 MHz
   Ganancia de corriente contínua (hfe): 15
   Paquete / Cubierta: TO218

 Búsqueda de reemplazo de transistor bipolar BD246F

 

BD246F Datasheet (PDF)

 9.1. Size:85K  bourns
bd246-a-b-c.pdf

BD246F
BD246F

BD246, BD246A, BD246B, BD246CPNP SILICON POWER TRANSISTORS Designed for Complementary Use with the SOT-93 PACKAGEBD245 Series (TOP VIEW) 80 W at 25C Case TemperatureB1 10 A Continuous Collector CurrentC 2 15 A Peak Collector Current Customer-Specified Selections Available3EPin 2 is in electrical contact with the mounting base.MDTRAAAabsolute maxi

 9.2. Size:91K  power-innovations
bd246.pdf

BD246F
BD246F

BD246, BD246A, BD246B, BD246CPNP SILICON POWER TRANSISTORSCopyright 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997 Designed for Complementary Use with the SOT-93 PACKAGEBD245 Series(TOP VIEW) 80 W at 25C Case TemperatureB1 10 A Continuous Collector Current 15 A Peak Collector Current 2C Customer-Specified Selections Available3EPin 2 is in

 9.3. Size:217K  inchange semiconductor
bd246 bd246a bd246b bd246c.pdf

BD246F
BD246F

isc Silicon PNP Power Transistor BD246/A/B/CDESCRIPTIONCollector Current -I = -10ACCollector-Emitter Breakdown Voltage-: V = -45V(Min)- BD246; -60V(Min)- BD246A(BR)CEO-80V(Min)- BD246B; -100V(Min)- BD246CComplement to Type BD245/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose

 9.4. Size:210K  inchange semiconductor
bd246 a b c.pdf

BD246F
BD246F

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor BD246/A/B/C DESCRIPTION Collector Current -IC= -10A Collector-Emitter Breakdown Voltage- : V(BR)CEO = -45V(Min)- BD246; -60V(Min)- BD246A -80V(Min)- BD246B; -100V(Min)- BD246C Complement to Type BD245/A/B/C APPLICATIONS Designed for use in general purpose power amplifier and switching

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