BD249 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

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Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD249/A/B/C DESCRIPTION With TO-3PN package Complement to type BD250/A/B/C 125 W at 25 C case temperature 25 A continuous collector current PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum rat

INCHANGE Semiconductor isc Silicon NPN Power Transistor BD249/A/B/C DESCRIPTION Collector Current -I = 25A C Complement to Type BD250/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U

BD249C NPN High-Power Transistor NPN high-power transistors are for general-purpose power amplifier and switching applications. Features ESD Ratings Machine Model, C; > 400 V http //onsemi.com Human Body Model, 3B; > 8000 V Epoxy Meets UL 94 V-0 @ 0.125 25 AMP, 100 VOLT, 125 WATT Pb-Free Package is Available* NPN SILICON POWER TRANSISTOR MAXIMUM RATINGS Rating Symbol

BD249, BD249A, BD249B, BD249C NPN SILICON POWER TRANSISTORS Designed for Complementary Use with the SOT-93 PACKAGE BD250 Series (TOP VIEW) 125 W at 25 C Case Temperature B 1 25 A Continuous Collector Current C 2 40 A Peak Collector Current Customer-Specified Selections Available 3 E Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute ma