BD249 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

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Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD249/A/B/C DESCRIPTION With TO-3PN package Complement to type BD250/A/B/C 125 W at 25C case temperature 25 A continuous collector current PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterFig.1 simplified outline (TO-3PN) and symbol Absolute maximum rat

INCHANGE Semiconductorisc Silicon NPN Power Transistor BD249/A/B/CDESCRIPTIONCollector Current -I = 25ACComplement to Type BD250/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose power amplifier andswitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U

BD249CNPN High-Power TransistorNPN high-power transistors are for general-purpose poweramplifier and switching applications.Features ESD Ratings: Machine Model, C; > 400 Vhttp://onsemi.comHuman Body Model, 3B; > 8000 V Epoxy Meets UL 94 V-0 @ 0.12525 AMP, 100 VOLT, 125 WATT Pb-Free Package is Available*NPN SILICONPOWER TRANSISTORMAXIMUM RATINGSRating Symbol

BD249, BD249A, BD249B, BD249CNPN SILICON POWER TRANSISTORS Designed for Complementary Use with the SOT-93 PACKAGEBD250 Series(TOP VIEW) 125 W at 25C Case TemperatureB1 25 A Continuous Collector CurrentC 2 40 A Peak Collector Current Customer-Specified Selections Available3EPin 2 is in electrical contact with the mounting base.MDTRAAAabsolute ma