BD249A . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BD249A
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 125 W
Tensión colector-base (Vcb): 70 V
Tensión colector-emisor (Vce): 60 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 40 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 3 MHz
Ganancia de corriente contínua (hfe): 25
Paquete / Cubierta: TO218
Búsqueda de reemplazo de transistor bipolar BD249A
BD249A Datasheet (PDF)
bd249 bd249a bd249b bd249c.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor BD249/A/B/CDESCRIPTIONCollector Current -I = 25ACComplement to Type BD250/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose power amplifier andswitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U
bd249c.pdf
BD249CNPN High-Power TransistorNPN high-power transistors are for general-purpose poweramplifier and switching applications.Features ESD Ratings: Machine Model, C; > 400 Vhttp://onsemi.comHuman Body Model, 3B; > 8000 V Epoxy Meets UL 94 V-0 @ 0.12525 AMP, 100 VOLT, 125 WATT Pb-Free Package is Available*NPN SILICONPOWER TRANSISTORMAXIMUM RATINGSRating Symbol
bd249-a-b-c.pdf
BD249, BD249A, BD249B, BD249CNPN SILICON POWER TRANSISTORS Designed for Complementary Use with the SOT-93 PACKAGEBD250 Series(TOP VIEW) 125 W at 25C Case TemperatureB1 25 A Continuous Collector CurrentC 2 40 A Peak Collector Current Customer-Specified Selections Available3EPin 2 is in electrical contact with the mounting base.MDTRAAAabsolute ma
bd249 a b c.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD249/A/B/C DESCRIPTION With TO-3PN package Complement to type BD250/A/B/C 125 W at 25C case temperature 25 A continuous collector current PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterFig.1 simplified outline (TO-3PN) and symbol Absolute maximum rat
Otros transistores... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
History: NA32K | 2N519A | BFX59R | BFX56 | ZXTP19020DZ
History: NA32K | 2N519A | BFX59R | BFX56 | ZXTP19020DZ
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050