BD249F Datasheet. Equivalente

 9.1. Size:189K  onsemi
 bd249c.pdf

BD249C NPN High-Power Transistor NPN high-power transistors are for general-purpose power amplifier and switching applications. Features ESD Ratings Machine Model, C; > 400 V http //onsemi.com Human Body Model, 3B; > 8000 V Epoxy Meets UL 94 V-0 @ 0.125 25 AMP, 100 VOLT, 125 WATT Pb-Free Package is Available* NPN SILICON POWER TRANSISTOR MAXIMUM RATINGS Rating Symbol

 9.2. Size:86K  bourns
 bd249-a-b-c.pdf

BD249, BD249A, BD249B, BD249C NPN SILICON POWER TRANSISTORS Designed for Complementary Use with the SOT-93 PACKAGE BD250 Series (TOP VIEW) 125 W at 25 C Case Temperature B 1 25 A Continuous Collector Current C 2 40 A Peak Collector Current Customer-Specified Selections Available 3 E Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute ma

 9.3. Size:131K  mospec
 bd249 bd250.pdf

A A A

 9.4. Size:121K  inchange semiconductor
 bd249 a b c.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD249/A/B/C DESCRIPTION With TO-3PN package Complement to type BD250/A/B/C 125 W at 25 C case temperature 25 A continuous collector current PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum rat

 9.5. Size:194K  inchange semiconductor
 bd249 bd249a bd249b bd249c.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor BD249/A/B/C DESCRIPTION Collector Current -I = 25A C Complement to Type BD250/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U