BD250A . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BD250A
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 125 W
Tensión colector-base (Vcb): 70 V
Tensión colector-emisor (Vce): 60 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 40 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 3 MHz
Ganancia de corriente contínua (hfe): 30
Paquete / Cubierta: TO218
Búsqueda de reemplazo de transistor bipolar BD250A
BD250A Datasheet (PDF)
bd250 bd250a bd250b bd250c.pdf
SPTECH Product SpecificationSPTECH Silicon PNP Power Transistor BD250/A/B/CDESCRIPTIONCollector Current -I = -25ACCollector-Emitter Breakdown Voltage-: V = -45V(Min)- BD250; -60V(Min)- BD250A(BR)CEO-80V(Min)- BD250B; -100V(Min)- BD250CComplement to Type BD249/A/B/CAPPLICATIONSDesigned for use in general purpose power amplifier andswitching applicationsABSOLUTE
bd250 bd250a bd250b bd250c.pdf
isc Silicon PNP Power Transistor BD250/A/B/CDESCRIPTIONCollector Current -I = -25ACCollector-Emitter Breakdown Voltage-: V = -45V(Min)- BD250; -60V(Min)- BD250A(BR)CEO-80V(Min)- BD250B; -100V(Min)- BD250CComplement to Type BD249/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose
bd250-a-b-c.pdf
BD250, BD250A, BD250B, BD250CPNP SILICON POWER TRANSISTORS Designed for Complementary Use with the SOT-93 PACKAGE(TOP VIEW)BD249 Series 125 W at 25C Case TemperatureB1 25 A Continuous Collector CurrentC 2 40 A Peak Collector Current Customer-Specified Selections Available3EPin 2 is in electrical contact with the mounting base.MDTRAAAabsolute ma
bd250 a b c.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD250/A/B/C DESCRIPTION With TO-3PN package Complement to type BD249/A/B/C 125 W at 25C case temperature 25 A continuous collector current PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum rat
Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
History: NSDU02 | 2N4047 | 2N6411 | NTE2545 | 2N4313 | 2SA1593S-TL-E
History: NSDU02 | 2N4047 | 2N6411 | NTE2545 | 2N4313 | 2SA1593S-TL-E
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050