BD250A Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BD250A
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 125 W
Tensión colector-base (Vcb): 70 V
Tensión colector-emisor (Vce): 60 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 40 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 3 MHz
Ganancia de corriente contínua (hFE): 30
Encapsulados: TO218
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BD250A datasheet
bd250 bd250a bd250b bd250c.pdf
SPTECH Product Specification SPTECH Silicon PNP Power Transistor BD250/A/B/C DESCRIPTION Collector Current -I = -25A C Collector-Emitter Breakdown Voltage- V = -45V(Min)- BD250; -60V(Min)- BD250A (BR)CEO -80V(Min)- BD250B; -100V(Min)- BD250C Complement to Type BD249/A/B/C APPLICATIONS Designed for use in general purpose power amplifier and switching applications ABSOLUTE
bd250 bd250a bd250b bd250c.pdf
isc Silicon PNP Power Transistor BD250/A/B/C DESCRIPTION Collector Current -I = -25A C Collector-Emitter Breakdown Voltage- V = -45V(Min)- BD250; -60V(Min)- BD250A (BR)CEO -80V(Min)- BD250B; -100V(Min)- BD250C Complement to Type BD249/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose
bd250-a-b-c.pdf
BD250, BD250A, BD250B, BD250C PNP SILICON POWER TRANSISTORS Designed for Complementary Use with the SOT-93 PACKAGE (TOP VIEW) BD249 Series 125 W at 25 C Case Temperature B 1 25 A Continuous Collector Current C 2 40 A Peak Collector Current Customer-Specified Selections Available 3 E Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute ma
Otros transistores... BD249, BD249A, BD249B, BD249C, BD249D, BD249E, BD249F, BD250, 2SC5198, BD250B, BD250C, BD250D, BD250E, BD250F, BD251, BD253, BD2530
History: BD250D
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