BD250E Datasheet. Equivalente

 9.1. Size:87K  bourns
 bd250-a-b-c.pdf

BD250, BD250A, BD250B, BD250C PNP SILICON POWER TRANSISTORS Designed for Complementary Use with the SOT-93 PACKAGE (TOP VIEW) BD249 Series 125 W at 25 C Case Temperature B 1 25 A Continuous Collector Current C 2 40 A Peak Collector Current Customer-Specified Selections Available 3 E Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute ma

 9.2. Size:131K  mospec
 bd249 bd250.pdf

A A A

 9.3. Size:177K  cn sptech
 bd250 bd250a bd250b bd250c.pdf

SPTECH Product Specification SPTECH Silicon PNP Power Transistor BD250/A/B/C DESCRIPTION Collector Current -I = -25A C Collector-Emitter Breakdown Voltage- V = -45V(Min)- BD250; -60V(Min)- BD250A (BR)CEO -80V(Min)- BD250B; -100V(Min)- BD250C Complement to Type BD249/A/B/C APPLICATIONS Designed for use in general purpose power amplifier and switching applications ABSOLUTE

 9.4. Size:122K  inchange semiconductor
 bd250 a b c.pdf

Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD250/A/B/C DESCRIPTION With TO-3PN package Complement to type BD249/A/B/C 125 W at 25 C case temperature 25 A continuous collector current PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum rat

 9.5. Size:217K  inchange semiconductor
 bd250 bd250a bd250b bd250c.pdf

isc Silicon PNP Power Transistor BD250/A/B/C DESCRIPTION Collector Current -I = -25A C Collector-Emitter Breakdown Voltage- V = -45V(Min)- BD250; -60V(Min)- BD250A (BR)CEO -80V(Min)- BD250B; -100V(Min)- BD250C Complement to Type BD249/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose