BD302A . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BD302A
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 55 W
Tensión colector-base (Vcb): 80 V
Tensión colector-emisor (Vce): 80 V
Corriente del colector DC máxima (Ic): 8 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 3 MHz
Ganancia de corriente contínua (hfe): 30
Paquete / Cubierta: TO220
Búsqueda de reemplazo de transistor bipolar BD302A
BD302A Datasheet (PDF)
cjbd3020.pdf
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JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB3.33.3-8L-B Plastic-Encapsulate MOSFETS N-Channel Power MOSFETCJBD3020 ID V(BR)DSS RDS(on)TYP PD F NWB3.33.3-8L-B9.5m@10V30 V20A14.5m@4.5VDESCRIPTION The CJBD3020 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications
cjbd3020.pdf
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JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB3.33.3-8L-B Plastic-Encapsulate MOSFETS N-Channel Power MOSFETCJBD3020 ID V(BR)DSS RDS(on)TYP PD F NWB3.33.3-8L-B9.5m@10V30 V20A14.5m@4.5VDESCRIPTION The CJBD3020 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications
bd302.pdf
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isc Silicon PNP Power Transistor BD302DESCRIPTIONDC Current Gain -: h = 30(Min.)@ I = -3AFE CCollector-Emitter Breakdown Voltage-: V = -45V(Min.)(BR)CEOComplement to Type BD301Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio output stages up to 25W, verticaldeflection circuits in color TV receiver
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D882P , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .