BD376-10 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BD376-10
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 25 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 45 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 2 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 50 MHz
Ganancia de corriente contínua (hfe): 63
Paquete / Cubierta: TO126
Búsqueda de reemplazo de transistor bipolar BD376-10
BD376-10 Datasheet (PDF)
bd376 bd378 bd380.pdf
BD376/378/380Medium Power Linear and Switching Applications Complement to BD375, BD377 and BD379 respectivelyTO-1261PNP Epitaxial Silicon Transistor1. Emitter 2.Collector 3.BaseAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage : BD376 - 50 V: BD378 - 75 V: BD380 - 100 V VCEO Collector-Emitter Voltage : B
bd376 bd378 bd380.pdf
BD376/378/380 PNP EPITAXIAL SILICON TRANSISTORMEDIUM POWER LINEAR ANDTO-126SWITCHING APPLICATIONS Complement to BD375, BD377 and BD379 respectivelyABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector Base Voltage : BD376 VCBO - 50 V. : BD378 - 75 V : BD380 - 100 V Collector Emitter Voltage : BD376 VCEO - 45 V1. Emitter 2.Collector 3.Base : BD378 - 60
hsbd376.pdf
PNP S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HSBD376 APPLICATIONS Medium Power Linear switching Applications ABSOLUTE MAXIMUM RATINGSTa=25 TstgStorage Temperature -55~150 TjJunction Temperature 150 PCCollector DissipationTc=25
bd376 bd378 bd380 .pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors BD376/378/380 DESCRIPTION DC Current Gain- : hFE= 20(Min)@ IC= -1A Complement to Type BD375/377/379 APPLICATIONS Designed for medium power linear and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITBD376 -50 VCBO Collector-Base Voltage BD378 -75
bd376 bd378 bd380.pdf
isc Silicon PNP Power Transistors BD376/378/380DESCRIPTIONDC Current Gain-: h = 20(Min)@ I = -1AFE CComplement to Type BD375/377/379Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for medium power linear and switchingapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITBD376 -50V Col
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: 2SD1804R
History: 2SD1804R
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050