BD376-10 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

BD376/378/380 Medium Power Linear and Switching Applications Complement to BD375, BD377 and BD379 respectively TO-126 1 PNP Epitaxial Silicon Transistor 1. Emitter 2.Collector 3.Base Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage BD376 - 50 V BD378 - 75 V BD380 - 100 V VCEO Collector-Emitter Voltage B

BD376/378/380 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND TO-126 SWITCHING APPLICATIONS Complement to BD375, BD377 and BD379 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector Base Voltage BD376 VCBO - 50 V . BD378 - 75 V BD380 - 100 V Collector Emitter Voltage BD376 VCEO - 45 V 1. Emitter 2.Collector 3.Base BD378 - 60

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors BD376/378/380 DESCRIPTION DC Current Gain- hFE= 20(Min)@ IC= -1A Complement to Type BD375/377/379 APPLICATIONS Designed for medium power linear and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT BD376 -50 VCBO Collector-Base Voltage BD378 -75

isc Silicon PNP Power Transistors BD376/378/380 DESCRIPTION DC Current Gain- h = 20(Min)@ I = -1A FE C Complement to Type BD375/377/379 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for medium power linear and switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT BD376 -50 V Col