BD379-6 Todos los transistores

 

BD379-6 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BD379-6

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 25 W

Tensión colector-base (Vcb): 100 V

Tensión colector-emisor (Vce): 80 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 50 MHz

Ganancia de corriente contínua (hfe): 40

Empaquetado / Estuche: TO126

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BD379-6 Datasheet (PDF)

9.1. bd375 bd377 bd379.pdf Size:42K _fairchild_semi

BD379-6
BD379-6

BD375/377/379Medium Power Linear and Switching Applications Complement to BD376, BD378 and BD380 respectivelyTO-1261NPN Epitaxial Silicon Transistor1. Emitter 2.Collector 3.BaseAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage : BD375 50 V : BD377 75 V : BD379 100 V VCEO Collector-Emitter Voltage : BD375

9.2. hsbd379.pdf Size:250K _shantou-huashan

BD379-6

NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HSBD379 APPLICATIONS Medium Power Linear switching Applications ABSOLUTE MAXIMUM RATINGSTa=25 TstgStorage Temperature -55~150 TjJunction Temperature 150 PCCollector DissipationTc=25

 9.3. bd375 bd377 bd379.pdf Size:157K _inchange_semiconductor

BD379-6
BD379-6

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BD375/377/379 DESCRIPTION DC Current Gain- : hFE= 20(Min)@ IC= 1A Complement to Type BD376/378/380 APPLICATIONS Designed for medium power linear and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITBD375 50 VCBO Collector-Base Voltage BD377 75 V

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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