2N2893 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2N2893
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 30 W
   Tensión colector-base (Vcb): 100 V
   Tensión colector-emisor (Vce): 80 V
   Corriente del colector DC máxima (Ic): 5 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 30 MHz
   Capacitancia de salida (Cc): 70 pF
   Ganancia de corriente contínua (hfe): 50
   Paquete / Cubierta: TO59

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2N2893 Datasheet (PDF)

9.1. Size:171K rca
2n2898.pdf pdf_icon

9.2. Size:577K rca
2n2895.pdf pdf_icon

9.3. Size:501K rca
2n2896.pdf pdf_icon

9.4. Size:156K rca
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9.5. Size:552K rca
2n2897.pdf pdf_icon

9.6. Size:113K st
2n2894 2n3209.pdf pdf_icon

9.7. Size:10K semelab
2n2894a.pdf pdf_icon

2N2894ADimensions in mm (inches). Bipolar PNP Device in a 5.84 (0.230)5.31 (0.209) Hermetically sealed TO18 4.95 (0.195)4.52 (0.178)Metal Package. Bipolar PNP Device. VCEO = 12V 0.48 (0.019)0.41 (0.016)dia.IC = 0.2A 2.54 (0.100)All Semelab hermetically sealed products Nom. can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JA

9.8. Size:274K semelab
2n2894ac1a.pdf pdf_icon

HIGH SPEED PNP SILICON BIPOLAR TRANSISTOR 2N2894AC1 Hermetic Ceramic Surface Mount Package (SOT23 Compatible) Silicon Planar Epitaxial PNP Transistor High Speed low Saturation Switching Space Level and High-Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO Collector Base Voltage -12V VCEO Collecto

9.9. Size:15K semelab
2n2894.pdf pdf_icon

2N2894PNP SILICON MECHANICAL DATADimensions in mm (inches) TRANSISTOR 5.84 (0.230)5.31 (0.209)FEATURES4.95 (0.195)4.52 (0.178) SILICON PNP TRANSISTOR HIGH SPEED, LOW SATURATION SWITCHAPPLICATIONS:0.48 (0.019)GENERAL PURPOSE SWITCHING0.41 (0.016)dia.APPLICATIONS2.54 (0.100)Nom.3 12TO18Underside ViewPIN1 EMITER PIN 2 BASE PIN 3 COLLE

9.10. Size:225K semelab
2n2896x.pdf pdf_icon

SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N2896X High Voltage Hermetic TO-18 Metal package. Ideally suited for General Purpose Amplifier Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO Collector Base Voltage 140V VCEO Collector Emitter Voltage 90V VCER Collector Emitter Voltage 140

9.11. Size:250K semelab
2n2891smd05.pdf pdf_icon

SILICON NPN TRANSISTOR 2N2891SMD05 V(BR)CEO = 80V (Min). Hermetic Ceramic Surface Mount Package Ideally Suited For Low Frequency Large Signal Applications (High Voltage). Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO Collector Base Voltage 100V VCEO Collector Emitter Voltage 80V VEBO Emitter

9.12. Size:10K semelab
2n2895.pdf pdf_icon

2N2895Dimensions in mm (inches). Bipolar NPN Device in a 5.84 (0.230)5.31 (0.209) Hermetically sealed TO18 4.95 (0.195)4.52 (0.178)Metal Package. Bipolar NPN Device. VCEO = 65V 0.48 (0.019)0.41 (0.016)dia.IC = 1A 2.54 (0.100)All Semelab hermetically sealed products Nom. can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTX

9.13. Size:274K semelab
2n2894ac1b.pdf pdf_icon

9.14. Size:19K semelab
2n2896csm4.pdf pdf_icon

2N2896CSM4MECHANICAL DATADimensions in mm (inches)NPN SILICON TRANSISTOR1.40 0.155.59 0.13(0.055 0.006)(0.22 0.005)0.25 0.03(0.01 0.001)FEATURES0.23rad.(0.009)3 20.23 NPN High Voltage Planar Transistor4 1min.(0.009) Hermetic Ceramic Surface Mount1.02 0.20 2.03 0.20Package(0.04 0.008) (0.08 0.008) Full Screenin

9.15. Size:33K semelab
2n2894adcsm.pdf pdf_icon

2N2894ADCSMDUAL HIGH SPEED, MEDIUM POWERPNP GENERAL PURPOSE TRANSISTORIN A HERMETICALLY SEALEDMECHANICAL DATACERAMIC SURFACE MOUNT PACKAGEDimensions in mm (inches)FEATURES SILICON PLANAR EPITAXIAL DUAL PNP2.29 0.20 1.65 0.13 1.40 0.15(0.09 0.008) (0.065 0.005) (0.055 0.006)TRANSISTOR HERMETIC CERAMIC SURFACE MOUNT2 3PACKAGE 1 4 CECC SCR

9.16. Size:11K semelab
2n2891.pdf pdf_icon

2N2891Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPN Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 80V dia.IC = 2A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1 3

Otros transistores... 2N2886 , 2N2887 , 2N2890 , 2N2891 , 2N2891LCC4 , 2N2891LL , 2N2891SM , 2N2892 , S8550 , 2N2894 , 2N2894A , 2N2894ACSM , 2N2894AQF , 2N2894CSM , 2N2894DCSM , 2N2895 , 2N2896 .