2N2894 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N2894
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.36 W
Tensión colector-base (Vcb): 12 V
Tensión colector-emisor (Vce): 12 V
Tensión emisor-base (Veb): 4 V
Corriente del colector DC máxima (Ic): 0.2 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 400 MHz
Capacitancia de salida (Cc): 6 pF
Ganancia de corriente contínua (hFE): 30
Encapsulados: TO18
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2N2894 datasheet
2n2894.pdf
2N2894 PNP SILICON MECHANICAL DATA Dimensions in mm (inches) TRANSISTOR 5.84 (0.230) 5.31 (0.209) FEATURES 4.95 (0.195) 4.52 (0.178) SILICON PNP TRANSISTOR HIGH SPEED, LOW SATURATION SWITCH APPLICATIONS 0.48 (0.019) GENERAL PURPOSE SWITCHING 0.41 (0.016) dia. APPLICATIONS 2.54 (0.100) Nom. 3 1 2 TO18 Underside View PIN1 EMITER PIN 2 BASE PIN 3 COLLE
2n2894a.pdf
2N2894A Dimensions in mm (inches). Bipolar PNP Device in a 5.84 (0.230) 5.31 (0.209) Hermetically sealed TO18 4.95 (0.195) 4.52 (0.178) Metal Package. Bipolar PNP Device. VCEO = 12V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.2A 2.54 (0.100) All Semelab hermetically sealed products Nom. can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JA
2n2894ac1a.pdf
HIGH SPEED PNP SILICON BIPOLAR TRANSISTOR 2N2894AC1 Hermetic Ceramic Surface Mount Package (SOT23 Compatible) Silicon Planar Epitaxial PNP Transistor High Speed low Saturation Switching Space Level and High-Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise stated) VCBO Collector Base Voltage -12V VCEO Collecto
Otros transistores... 2N2887, 2N2890, 2N2891, 2N2891LCC4, 2N2891LL, 2N2891SM, 2N2892, 2N2893, BD335, 2N2894A, 2N2894ACSM, 2N2894AQF, 2N2894CSM, 2N2894DCSM, 2N2895, 2N2896, 2N2897
History: 2N2894ACSM
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