2N2899 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N2899
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.5 W
Tensión colector-base (Vcb): 140 V
Tensión colector-emisor (Vce): 90 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 1 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 120 MHz
Capacitancia de salida (Cc): 15 pF
Ganancia de corriente contínua (hFE): 60
Encapsulados: TO46
Búsqueda de reemplazo de 2N2899
- Selecciónⓘ de transistores por parámetros
2N2899 datasheet
9.6. Size:10K semelab
2n2894a.pdf 
2N2894A Dimensions in mm (inches). Bipolar PNP Device in a 5.84 (0.230) 5.31 (0.209) Hermetically sealed TO18 4.95 (0.195) 4.52 (0.178) Metal Package. Bipolar PNP Device. VCEO = 12V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.2A 2.54 (0.100) All Semelab hermetically sealed products Nom. can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JA
9.7. Size:274K semelab
2n2894ac1a.pdf
HIGH SPEED PNP SILICON BIPOLAR TRANSISTOR 2N2894AC1 Hermetic Ceramic Surface Mount Package (SOT23 Compatible) Silicon Planar Epitaxial PNP Transistor High Speed low Saturation Switching Space Level and High-Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise stated) VCBO Collector Base Voltage -12V VCEO Collecto
9.8. Size:15K semelab
2n2894.pdf
2N2894 PNP SILICON MECHANICAL DATA Dimensions in mm (inches) TRANSISTOR 5.84 (0.230) 5.31 (0.209) FEATURES 4.95 (0.195) 4.52 (0.178) SILICON PNP TRANSISTOR HIGH SPEED, LOW SATURATION SWITCH APPLICATIONS 0.48 (0.019) GENERAL PURPOSE SWITCHING 0.41 (0.016) dia. APPLICATIONS 2.54 (0.100) Nom. 3 1 2 TO18 Underside View PIN1 EMITER PIN 2 BASE PIN 3 COLLE
9.9. Size:225K semelab
2n2896x.pdf
SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N2896X High Voltage Hermetic TO-18 Metal package. Ideally suited for General Purpose Amplifier Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise stated) VCBO Collector Base Voltage 140V VCEO Collector Emitter Voltage 90V VCER Collector Emitter Voltage 140
9.10. Size:250K semelab
2n2891smd05.pdf
SILICON NPN TRANSISTOR 2N2891SMD05 V(BR)CEO = 80V (Min). Hermetic Ceramic Surface Mount Package Ideally Suited For Low Frequency Large Signal Applications (High Voltage). Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise stated) VCBO Collector Base Voltage 100V VCEO Collector Emitter Voltage 80V VEBO Emitter
9.11. Size:10K semelab
2n2895.pdf
2N2895 Dimensions in mm (inches). Bipolar NPN Device in a 5.84 (0.230) 5.31 (0.209) Hermetically sealed TO18 4.95 (0.195) 4.52 (0.178) Metal Package. Bipolar NPN Device. VCEO = 65V 0.48 (0.019) 0.41 (0.016) dia. IC = 1A 2.54 (0.100) All Semelab hermetically sealed products Nom. can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTX
9.12. Size:274K semelab
2n2894ac1b.pdf
HIGH SPEED PNP SILICON BIPOLAR TRANSISTOR 2N2894AC1 Hermetic Ceramic Surface Mount Package (SOT23 Compatible) Silicon Planar Epitaxial PNP Transistor High Speed low Saturation Switching Space Level and High-Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise stated) VCBO Collector Base Voltage -12V VCEO Collecto
9.13. Size:19K semelab
2n2896csm4.pdf
2N2896CSM4 MECHANICAL DATA Dimensions in mm (inches) NPN SILICON TRANSISTOR 1.40 0.15 5.59 0.13 (0.055 0.006) (0.22 0.005) 0.25 0.03 (0.01 0.001) FEATURES 0.23 rad. (0.009) 3 2 0.23 NPN High Voltage Planar Transistor 4 1 min. (0.009) Hermetic Ceramic Surface Mount 1.02 0.20 2.03 0.20 Package (0.04 0.008) (0.08 0.008) Full Screenin
9.14. Size:33K semelab
2n2894adcsm.pdf
2N2894ADCSM DUAL HIGH SPEED, MEDIUM POWER PNP GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED MECHANICAL DATA CERAMIC SURFACE MOUNT PACKAGE Dimensions in mm (inches) FEATURES SILICON PLANAR EPITAXIAL DUAL PNP 2.29 0.20 1.65 0.13 1.40 0.15 (0.09 0.008) (0.065 0.005) (0.055 0.006) TRANSISTOR HERMETIC CERAMIC SURFACE MOUNT 2 3 PACKAGE 1 4 CECC SCR
9.15. Size:11K semelab
2n2891.pdf
2N2891 Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 80V dia. IC = 2A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3
Otros transistores... 2N2894ACSM, 2N2894AQF, 2N2894CSM, 2N2894DCSM, 2N2895, 2N2896, 2N2897, 2N2898, TIP127, 2N29, 2N290, 2N2900, 2N2902, 2N2903, 2N2903A, 2N2904, 2N2904A
