BD680 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Order this document MOTOROLA by BD676/D SEMICONDUCTOR TECHNICAL DATA BD676 BD676A Plastic Medium-Power BD678 Silicon PNP Darlingtons BD678A . . . for use as output devices in complementary general purpose amplifier applica- BD680 tions. High DC Current Gain BD680A hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc Monolithic Construction BD682 BD676, 676A, 678, 678A, 680

BD677/A/679/A681 BD678/A/680/A/682 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS n SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BD677, BD677A, BD679, BD679A and BD681 are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration mounted in Jedec SOT-32 plastic package. They are intended for use in medium power linar and switching applications 1 2

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP DARLIGNTON POWER SILICON TRANSISTORS BD676, 676A BD678, 678A BD680, 680A BD682, 684 TO126 Plastic Package E C B For Use As Output Devices In Complementary General Purpose Amplifier Applications. COMPLEMENTARY TO BD675, 675A, 677, 677A, 679, 679A, 681 & 683 BD678, 678A, 680, 680A ARE E

Power Transistors www.jmnic.com BD680 Silicon PNP Transistors Features E C B With TO-126 package In monolithic Darlington configuration This transistor is intended for use in medium power linar and switching applications Complement to type BD679 Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage 80 V VCEO Collector to emitter vol

isc Silicon PNP Darlington Power Transistor BD680 DESCRIPTION Collector Emitter Breakdown Voltage V = -80V (BR)CEO DC Current Gain h = 750(Min) @ I = -1.5 A FE C Complement to Type BD679 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as output devices in complementary general-purpose amplifier a

Inchange Semiconductor Product Specification Silicon PNP Darligton Power Transistors BD676/BD678/BD680 DESCRIPTION With TO-126 package Complement to type BD675/BD677/BD679 DARLINGTON High DC current gain APPLICATIONS For use as output devices in complementary general purpose amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to

BD677/A/679/A/681 BD678/A/680/A/682 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTON CONFIGURATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATION LINEAR AND SWITCHING INDUSTRIAL 1 2 EQUIPMENT 3 SOT-32 DESCRIPTION The BD677, BD677A, BD679, BD679A and BD681 are silicon epi

BD676A/678A/680A/682 Medium Power Linear and Switching Applications Medium Power Darlington TR Complement to BD675A, BD677A, BD679A and BD681 respectively TO-126 1 PNP Epitaxial Silicon Transistor 1. Emitter 2.Collector 3.Base Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage BD676A - 45 V BD678A - 60 V

BD676, BD676A, BD678, BD678A, BD680, BD680A, BD682, BD682T Plastic Medium-Power Silicon PNP Darlingtons http //onsemi.com This series of plastic, medium-power silicon PNP Darlington transistors can be used as output devices in complementary 4.0 AMP DARLINGTON general-purpose amplifier applications. POWER TRANSISTORS Features PNP SILICON High DC Current Gain - 45, 60, 80, 100 V

BD676, BD676A, BD678, BD678A, BD680, BD680A, BD682, BD682T Plastic Medium-Power Silicon PNP Darlingtons http //onsemi.com This series of plastic, medium-power silicon PNP Darlington transistors can be used as output devices in complementary 4.0 AMP DARLINGTON general-purpose amplifier applications. POWER TRANSISTORS Features PNP SILICON High DC Current Gain - 45, 60, 80, 100 V

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

isc Silicon PNP Darlington Power Transistor BD680A DESCRIPTION Collector Emitter Breakdown Voltage V = -80V (BR)CEO DC Current Gain h = 750(Min) @ I = -2A FE C Complement to Type BD679A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as output devices in complementary general-purpose amplifier ap

Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD676A/678A/680A/682 DESCRIPTION With TO-126 package Complement to type BD675A/677A/679A/681 DARLINGTON High DC current gain APPLICATIONS For medium power linear and switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute