BD743 Todos los transistores

 ..1. Size:43K  jmnic
 bd743 bd743a bd743b bd743c.pdf

Product Specification www.jmnic.com Silicon NPN Power Transistors BD743/A/B/C DESCRIPTION With TO-220C package Complement to type BD744/A/B/C High current capability High power dissipation APPLICATIONS For use in power linear and switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ra

 ..2. Size:121K  inchange semiconductor
 bd743 a b c.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD743/A/B/C DESCRIPTION With TO-220C package Complement to type BD744/A/B/C High current capability High power dissipation APPLICATIONS For use in power linear and switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute m

 ..3. Size:210K  inchange semiconductor
 bd743.pdf

isc Silicon NPN Power Transistor BD743 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 45V(Min) (BR)CEO Collector Power Dissipation- P = 90W@ I = 25 C C 15A Continuous Collector Current Complement to Type BD744 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose power amplifier a

 0.1. Size:88K  bourns
 bd743-a-b-c.pdf

BD743, BD743A, BD743B, BD743C NPN SILICON POWER TRANSISTORS Designed for Complementary Use with the BD744 Series TO-220 PACKAGE (TOP VIEW) 90 W at 25 C Case Temperature 15 A Continuous Collector Current B 1 20 A Peak Collector Current C 2 Customer-Specified Selections Available 3 E Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maxim

 0.2. Size:210K  inchange semiconductor
 bd743a.pdf

isc Silicon NPN Power Transistor BD743A DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO Collector Power Dissipation- P = 90W@ I = 25 C C 15A Continuous Collector Current Complement to Type BD744A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose power amplifier

 0.3. Size:210K  inchange semiconductor
 bd743c.pdf

isc Silicon NPN Power Transistor BD743C DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO Collector Power Dissipation- P = 90W@ I = 25 C C 15A Continuous Collector Current Complement to Type BD744C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose power amplifie

 0.4. Size:210K  inchange semiconductor
 bd743b.pdf

isc Silicon NPN Power Transistor BD743B DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO Collector Power Dissipation- P = 90W@ I = 25 C C 15A Continuous Collector Current Complement to Type BD744B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose power amplifier