BD746B . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: BD746B
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 115 W
   Tensión colector-base (Vcb): 90 V
   Tensión colector-emisor (Vce): 80 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 20 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 5 MHz
   Ganancia de corriente contínua (hfe): 20
   Paquete / Cubierta: TO218

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BD746B Datasheet (PDF)

..1. Size:219K inchange semiconductor
bd746 bd746a bd746b bd746c.pdf

isc Silicon PNP Power Transistor BD746/A/B/CDESCRIPTIONCollector Current -I = -20ACCollector-Emitter Breakdown Voltage-: V = -45V(Min)- BD746; -60V(Min)- BD746A(BR)CEO-80V(Min)- BD746B; -100V(Min)- BD746CComplement to Type BD745/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose

9.1. Size:86K bourns
bd746-a-b-c.pdf

BD746, BD746A, BD746B, BD746CPNP SILICON POWER TRANSISTORS Designed for Complementary Use with the SOT-93 PACKAGEBD745 Series (TOP VIEW) 115 W at 25C Case TemperatureB1 20 A Continuous Collector CurrentC 2 25 A Peak Collector Current Customer-Specified Selections Available3EPin 2 is in electrical contact with the mounting base.MDTRAAAabsolute max

9.2. Size:93K inchange semiconductor
bd746 a b c.pdf

Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD746/A/B/C DESCRIPTION With TO-3PN package Complement to type BD745/A/B/C High current capability High power dissipation APPLICATIONS For use in power linear and switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outli

Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050