BD746C Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BD746C

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 115 W

Tensión colector-base (Vcb): 110 V

Tensión colector-emisor (Vce): 100 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 20 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 5 MHz

Ganancia de corriente contínua (hFE): 20

Encapsulados: TO218

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BD746C datasheet

 ..1. Size:219K  inchange semiconductor
 bd746 bd746a bd746b bd746c.pdf pdf_icon

BD746C

isc Silicon PNP Power Transistor BD746/A/B/C DESCRIPTION Collector Current -I = -20A C Collector-Emitter Breakdown Voltage- V = -45V(Min)- BD746; -60V(Min)- BD746A (BR)CEO -80V(Min)- BD746B; -100V(Min)- BD746C Complement to Type BD745/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose

 9.1. Size:86K  bourns
 bd746-a-b-c.pdf pdf_icon

BD746C

BD746, BD746A, BD746B, BD746C PNP SILICON POWER TRANSISTORS Designed for Complementary Use with the SOT-93 PACKAGE BD745 Series (TOP VIEW) 115 W at 25 C Case Temperature B 1 20 A Continuous Collector Current C 2 25 A Peak Collector Current Customer-Specified Selections Available 3 E Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute max

 9.2. Size:93K  inchange semiconductor
 bd746 a b c.pdf pdf_icon

BD746C

Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD746/A/B/C DESCRIPTION With TO-3PN package Complement to type BD745/A/B/C High current capability High power dissipation APPLICATIONS For use in power linear and switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outli

Otros transistores... BD745B, BD745C, BD745D, BD745E, BD745F, BD746, BD746A, BD746B, 2N5401, BD746D, BD746E, BD746F, BD750, BD750A, BD750B, BD750C, BD751