BD751C . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BD751C
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 250 W
Tensión colector-base (Vcb): 140 V
Tensión colector-emisor (Vce): 140 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 20 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 4 MHz
Ganancia de corriente contínua (hfe): 25
Paquete / Cubierta: TO3
Búsqueda de reemplazo de transistor bipolar BD751C
BD751C Datasheet (PDF)
bd751b bd751c.pdf
isc Silicon NPN Power Transistors BD751B/751CDESCRIPTION Collector-Emitter Sustaining Voltage-: V = 100V(Min)- BD751BCEO(SUS)= 130V(Min)- BD751CHigh Power DissipationComplement to Type BD750B/750CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage and high power amplifierapplications.ABSOLUTE
bd751b bd751c .pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BD751B/751C DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min)- BD751B = 130V(Min)- BD751C High Power Dissipation Complement to Type BD750B/750C APPLICATIONSDesigned for high voltage and high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25)
bd751 bd751a.pdf
SPTECH Product SpecificationSPTECH Silicon NPN Power Transistors BD751/751ADESCRIPTION Collector-Emitter Sustaining Voltage-: V = 90V(Min)- BD751CEO(SUS)= 120V(Min)- BD751AHigh Power DissipationComplement to Type BD750/750AAPPLICATIONSDesigned for high voltage and high power amplifierapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT
bd751 bd751a .pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BD751/751A DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 90V(Min)- BD751 = 120V(Min)- BD751A High Power Dissipation Complement to Type BD750/750A APPLICATIONSDesigned for high voltage and high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SY
bd751 bd751a.pdf
isc Silicon NPN Power Transistors BD751/751ADESCRIPTION Collector-Emitter Sustaining Voltage-: V = 90V(Min)- BD751CEO(SUS)= 120V(Min)- BD751AHigh Power DissipationComplement to Type BD750/750AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage and high power amplifierapplications.ABSOLUTE MAXI
Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 13009 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
