BD751C Todos los transistores

 

BD751C Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BD751C
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 250 W
   Tensión colector-base (Vcb): 140 V
   Tensión colector-emisor (Vce): 140 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 20 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 4 MHz
   Ganancia de corriente contínua (hfe): 25
   Paquete / Cubierta: TO3
 

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BD751C datasheet

 ..1. Size:207K  inchange semiconductor
 bd751b bd751c.pdf pdf_icon

BD751C

isc Silicon NPN Power Transistors BD751B/751C DESCRIPTION Collector-Emitter Sustaining Voltage- V = 100V(Min)- BD751B CEO(SUS) = 130V(Min)- BD751C High Power Dissipation Complement to Type BD750B/750C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage and high power amplifier applications. ABSOLUTE

 ..2. Size:113K  inchange semiconductor
 bd751b bd751c .pdf pdf_icon

BD751C

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BD751B/751C DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS) = 100V(Min)- BD751B = 130V(Min)- BD751C High Power Dissipation Complement to Type BD750B/750C APPLICATIONS Designed for high voltage and high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 )

 9.1. Size:165K  cn sptech
 bd751 bd751a.pdf pdf_icon

BD751C

SPTECH Product Specification SPTECH Silicon NPN Power Transistors BD751/751A DESCRIPTION Collector-Emitter Sustaining Voltage- V = 90V(Min)- BD751 CEO(SUS) = 120V(Min)- BD751A High Power Dissipation Complement to Type BD750/750A APPLICATIONS Designed for high voltage and high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT

 9.2. Size:113K  inchange semiconductor
 bd751 bd751a .pdf pdf_icon

BD751C

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BD751/751A DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS) = 90V(Min)- BD751 = 120V(Min)- BD751A High Power Dissipation Complement to Type BD750/750A APPLICATIONS Designed for high voltage and high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SY

MOSTRAR MÁS

Otros transistores... BD746F , BD750 , BD750A , BD750B , BD750C , BD751 , BD751A , BD751B , BD140 , BD775 , BD776 , BD777 , BD778 , BD779 , BD780 , BD785 , BD786 .

 

 
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