BD787 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BD787

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 15 W

Tensión colector-base (Vcb): 80 V

Tensión colector-emisor (Vce): 60 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 4 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 50 MHz

Ganancia de corriente contínua (hFE): 40

Encapsulados: SOT23

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BD787 datasheet

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BD787

Order this document MOTOROLA by BD787/D SEMICONDUCTOR TECHNICAL DATA NPN BD787 PNP Complementary Plastic Silicon BD788 Power Transistors . . . designed for lower power audio amplifier and low current, high speed switching applications. 4 AMPERE Low Collector Emitter Sustaining Voltage POWER TRANSISTORS VCEO(sus) 60 Vdc (Min) BD787, BD788 COMPLEMENTARY High C

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BD787

BD787 - NPN, BD788 - PNP Complementary Plastic Silicon Power Transistors These devices are designed for lower power audio amplifier and low current, high-speed switching applications. Features http //onsemi.com Low Collector-Emitter Sustaining Voltage - VCEO(sus) 60 Vdc (Min) 4 AMPERES High Current-Gain - Bandwidth Product - fT = 50 MHz (Min) @ IC = 100 mAdc POWER TRANSISTORS

 ..3. Size:208K  inchange semiconductor
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BD787

isc Silicon NPN Power Transistor BD787 DESCRIPTION DC Current Gain- h = 40 250(Min)@ I = 0.2A FE C Collector-Emitter Sustaining Voltage - V = 60V(Min) CEO(SUS) Complement to type BD788 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low power audio amplifier and low current, high-speed switching applications

 0.1. Size:92K  onsemi
bd787g bd788g.pdf pdf_icon

BD787

BD787G (NPN), BD788G (PNP) Complementary Plastic Silicon Power Transistors These devices are designed for lower power audio amplifier and low current, high-speed switching applications. http //onsemi.com Features 4 AMPERES Low Collector-Emitter Sustaining Voltage POWER TRANSISTORS High Current-Gain - Bandwidth Product COMPLEMENTARY SILICON These Devices are Pb-Free and

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