BD909 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BD909
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 90 W
Tensión colector-base (Vcb): 80 V
Tensión colector-emisor (Vce): 80 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 15 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 3 MHz
Ganancia de corriente contínua (hfe): 15
Paquete / Cubierta: TO220
Búsqueda de reemplazo de transistor bipolar BD909
BD909 Datasheet (PDF)
bd909 bd911 bd910 bd912.pdf
BD909/911BD910/912COMPLEMENTARY SILICON POWER TRANSISTORS STMicroelectronics PREFERREDSALESTYPESDESCRIPTION The BD909 and BD911 are silicon Epitaxial-BaseNPN power transistors mounted in Jedec TO-220plastic package. They are intented for use inpower linear and switching applications.The complementary PNP types are BD910 and32BD912 respectively.1TO-220INTERNAL
bd909 bd910 bd911 bd912.pdf
BD909/911BD910/912COMPLEMENTARY SILICON POWER TRANSISTORS STMicroelectronics PREFERREDSALESTYPESDESCRIPTION The BD909 and BD911 are silicon Epitaxial-BaseNPN power transistors mounted in Jedec TO-220plastic package. They are intented for use inpower linear and switching applications.The complementary PNP types are BD910 and32BD912 respectively.1TO-220INTERNAL
bd905 bd906 bd907 bd908 bd909 bd910 bd911 bd912.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PLASTIC POWER TRANSISTORS BD 905, 907, 909, 911 NPN BD906, 908, 910, 912 PNP TO-220 Plastic PackagePower Linear and Switching ApplicationsABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise )DESCRIPTION SYMBOL 905 907 909 911 UNIT906 908 910 912Collector -Emitter Voltage VCEO
bd909 bd911.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD909 BD911 DESCRIPTION With TO-220C package Complement to type BD910 BD912 APPLICATIONS Intented for use in power linear and switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CO
bd909.pdf
isc Silicon NPN Power Transistor BD909DESCRIPTIONDC Current Gain -: h = 40(Min.)@ I = 0.5AFE CCollector-Emitter Sustaining Voltage-: V = 80V(Min)CEO(SUS)Complement to Type BD910Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose power amplifier andswitching applications.ABSOLUTE MA
stbd909 stbd911.pdf
ST BD909 / ST BD911 NPN Complementary Silicon Power Transistors TO-220 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Value Parameter Symbol Unit ST BD909 ST BD911 Collector Base Voltage VCBO 80 100 VCollector Emitter Voltage VCEO 80 100 VEmitter Base Voltage VEBO 5 VCollector Current IC 15 ABase Currentt IB 5 AOTotal Power Dissipation @ TC 25 C Ptot 90 W
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
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